Single-pole double-throw MEMS switch

• US 7,816,999 B2
• Filed: 04/12/2005
• Issued: 10/19/2010
• Est. Priority Date: 04/12/2004
• Status: Expired due to Fees

• Current Assignee: Siverta, Inc.
• Original Assignee: Siverta, Inc.
• Inventors: Slater, Timothy G., Pashby, Gary Joseph, Gottlieb, Glenn
• Primary Examiner(s): Enad; Elvin G
• Assistant Examiner(s): Rojas; Bernard
• Application Number:
  US11/578,012
• Publication Number:
  US 20070205087A1
• Time in Patent Office: 2,016 Days
• Field of Search: 335/78, 200/181, 296/22, 438406-408, 228/123.1, 228/124.6, 228/174, 228/208
• US Class Current: 335/78
• CPC Class Codes: H01H 59/0009 making use of micromechanics

Abstract

MEMS switches of varying configurations provide individually acutatable contacts. The MEMS switches are sealed by an improved anodic bonding technique.

Claims

1. A MEMS device comprising:

a first layer of material; and

a second layer of material wherein frit material bonds the first layer of material to the second layer of material, during bonding the frit material being compressed by a rail located within a layer of material selected from a group which includes the first layer of material and the second layer of material, said rail being disposed within a frit trench that receives the frit material.

2. The MEMS device of claim 1 wherein the frit material is anodically bonded between the first layer of material and the second layer of material.

3. The MEMS device of claim 2 wherein while establishing the frit bond between the first layer of material and the second layer of material a voltage of less than one-hundred (100) volts is applied across the first layer of material and the second layer of material.

4. A method for bonding together layers of a MEMS device comprising the steps of:

disposing frit material between a mated first layer of material and second layer of material of a MEMS device;

applying pressure across the mated first layer of material and second layer of material;

heating the mated first layer of material and second layer of material; and

applying an electrical potential across the mated first layer of material and second layer of material.

5. The method of claim 4 wherein the pressure applied across the mated first layer of material and second layer of material is at least 1800 Newtons.

6. The method of claim 4 wherein the mated first layer of material and second layer of material are heated to at least 400°

C.

7. The method of claim 4 wherein the frit material is compressed by a rail located within a layer of material selected from a group which includes the first layer of material and the second layer of material.

8. The method of claim 7 wherein the rail is disposed within a frit trench that receives the frit material.

9. The method of claim 4 wherein the electrical potential applied across the mated first layer of material and second layer of material is less than 100 volts.