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Manufacturing method, remanufacturing method and reshipping method for a semiconductor memory device

  • US 7,817,477 B2
  • Filed: 03/05/2008
  • Issued: 10/19/2010
  • Est. Priority Date: 03/30/2007
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor memory device having a plurality of memory cells in an FET structure formed on a semiconductor substrate, each of the plurality of memory cells being to store a unit bit and hold information data, the method comprising:

  • a preparing step that prepares the plurality of memory cells;

    a writing step that writes bits of the information data to the memory cells;

    a baking step that allows the memory cells to stand at a predetermined ambient temperature for a predetermined time after the writing step; and

    a rewriting step that writes bits of the information data to the memory cells after the baking step;

    wherein the semiconductor memory device, before written with the information data to the memory cells, is processed with a step of electrical erasing data being held by the memory cell and a step of neutralization baking of allowing the semiconductor memory device to stand at a first ambient temperature for a first time, the predetermined ambient temperature in the baking step being lower than the first ambient temperature in the neutralization baking step.

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