Semiconductor device manufacturing method, mask manufacturing method, and exposure method

• US 7,820,364 B2
• Filed: 04/26/2006
• Issued: 10/26/2010
• Est. Priority Date: 01/16/2006
• Status: Expired due to Fees

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Inventors: Sugimoto, Fumitoshi
• Primary Examiner(s): Rosasco; Stephen
• Assistant Examiner(s): Fraser; Stewart A
• Application Number:
  US11/411,019
• Publication Number:
  US 20070166627A1
• Time in Patent Office: 1,644 Days
• Field of Search: 430/5, 430/311, 430/394
• US Class Current: 430/311
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/70466 Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature stitching G03F7/70475

Abstract

In order to form a transfer pattern of desired size with high accuracy, a method for manufacturing a semiconductor device includes a process of forming the transfer pattern including a line whose width and angle varies, by performing multiple exposure using a plurality of masks having different patterns over different mask substrates.

Claims

1. A method for manufacturing a semiconductor device, comprising:

forming a transfer pattern including a line whose width varies, by performing multiple exposure using a plurality of masks having different patterns over different mask substrates,

wherein, as the multiple exposure using the plurality of masks, a first exposure using a first mask having a basic pattern for forming the transfer pattern including a wide width portion having a first width and a narrow width portion having a second width narrower than the first width, and a second exposure using a second mask having a correction pattern whose width is smaller than the narrow width portion in a position corresponding to the narrow width portion of the transfer pattern are performed, and

a light used in the first exposure and transmitting through the first mask has the same phase as a light used in the second exposure and transmitting through the second mask.

2. The method for manufacturing the semiconductor device according to claim 1,

wherein at least one of the first mask and the second mask has a dummy pattern in the vicinity of the pattern.

3. A method for manufacturing the semiconductor device comprising:

forming a transfer pattern including a line whose angle varies, by performing multiple exposure using a plurality of masks having different patterns over different mask substrates,

wherein, as the multiple exposure using the plurality of masks, a first exposure using a first mask having a basic pattern for forming the transfer pattern including a corner portion at which the line angle varies and, a second exposure using a second mask having a correction pattern whose width is smaller than a portion in the vicinity of the corner portion in a position corresponding to the portion in the vicinity of the corner portion of the transfer pattern are performed, and

a light used in the first exposure and transmitting through the first mask has the same phase as a light used in the second exposure and transmitting through the second mask.

4. The method for manufacturing the semiconductor device according to claim 3,

wherein the mask having the basic pattern includes an L-, T- or U-shaped pattern.

5. The method for manufacturing the semiconductor device according to claim 3,

wherein at least one of the first mask and the second mask has a dummy pattern in the vicinity of the pattern.

6. An exposure method comprising:

forming a transfer pattern including a line whose width varies, by performing a first exposure using one mask having one pattern over one mask substrate, and performing a second exposure using another mask having another pattern over another mask substrate,

wherein the one mask includes a basic pattern for forming the transfer pattern including a wide width portion having a first width and a narrow width portion having a second width narrower than the first width,

while the other mask includes a correction pattern whose width is smaller than the narrow width portion in a position corresponding to the narrow width portion of the transfer pattern, and

a light used in the first exposure and transmitting through the one mask has the same phase as a light used in the second exposure and transmitting through the other mask.

7. The exposure method according to claim 6,

wherein multiple exposure is performed using a plurality of masks having different patterns as the other mask.

8. An exposure method comprising:

forming a transfer pattern including a line whose angle varies, by performing a first exposure using one mask having one pattern over one mask substrate, and performing a second exposure using another mask having another pattern over another mask substrate,

wherein the one mask includes a basic pattern for forming the transfer pattern including a corner portion at which the line angle varies,

while the other mask includes a correction pattern whose width is smaller than a portion in the vicinity of the corner portion in a position corresponding to the portion in the vicinity of the corner portion of the transfer pattern, and

a light used in the first exposure and transmitting through the one mask has the same phase as a light used in the second exposure and transmitting through the other mask.

9. The exposure method according to claim 8,

wherein the mask having the basic pattern includes an L-, T- or U-shaped pattern.

10. The exposure method according to claim 8,

wherein multiple exposure is performed using a plurality of masks having different patterns as the other mask.