Light emitting device and manufacturing method thereof
First Claim
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1. A method of manufacturing a light emitting device comprising:
- forming a semiconductor film on an insulating material;
forming a first insulating film covering the semiconductor film;
forming a conductive film on the insulation film by laminating two or more conductive layers;
forming a gate electrode by etching the conductive film;
adding an n-type impurity element to the semiconductor film using the gate electrode as a mask;
etching a side face of the gate electrode;
selectively etching a first portion of the gate electrode;
adding an n-type impurity element to the semiconductor film through a second part of the gate electrode using the gate electrode except the second portion as a mask after etching the first portion;
forming a second insulating film covering the gate electrode;
forming wirings on the second insulating film to be in contact with the semiconductor film; and
forming a light emitting element on the second insulating film.
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Abstract
The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided.
161 Citations
14 Claims
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1. A method of manufacturing a light emitting device comprising:
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forming a semiconductor film on an insulating material; forming a first insulating film covering the semiconductor film; forming a conductive film on the insulation film by laminating two or more conductive layers; forming a gate electrode by etching the conductive film; adding an n-type impurity element to the semiconductor film using the gate electrode as a mask; etching a side face of the gate electrode; selectively etching a first portion of the gate electrode; adding an n-type impurity element to the semiconductor film through a second part of the gate electrode using the gate electrode except the second portion as a mask after etching the first portion; forming a second insulating film covering the gate electrode; forming wirings on the second insulating film to be in contact with the semiconductor film; and forming a light emitting element on the second insulating film. - View Dependent Claims (2, 3, 4, 9)
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5. A method of manufacturing a light emitting device comprising:
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forming a semiconductor film on an insulating material; forming a first insulating film covering the semiconductor film; forming a conductive film on the first insulation film by laminating a first conductive film and a second conductive film; forming a gate electrode which comprises a first gate electrode comprising the first conductive film and a second gate electrode comprising the second conductive film by etching the conductive film; adding an n-type impurity element to the semiconductor film using the first gate electrode and the second gate electrode as a mask; etching the first gate electrode and the second gate electrode; selectively etching the second gate electrode; adding an n-type impurity element to the semiconductor film through a part of the first gate electrode using the selectively etched second gate electrode as a mask; forming a second insulating film covering the gate electrode; forming wirings on the second insulating film to be in contact with the semiconductor film; and forming a light emitting element on the second insulating film. - View Dependent Claims (6, 7, 8, 10)
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11. A method of manufacturing a light emitting device comprising:
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forming a semiconductor film on an insulating material; forming a first insulating film covering the semiconductor film; forming a conductive film on the first insulation film by laminating a first conductive film and a second conductive film; forming a gate electrode which comprises a first gate electrode comprising the first conductive film and a second gate electrode comprising the second conductive film by etching the conductive film; adding an n-type impurity element to the semiconductor film using the first gate electrode and the second gate electrode as a mask; etching the first gate electrode and the second gate electrode; selectively etching the second gate electrode; adding an n-type impurity element to the semiconductor film through a part of the first gate electrode using the selectively etched second gate electrode as a mask; forming a coloring layer overlapping with the gate electrode; forming a second insulating film covering the coloring layer; forming wirings on the second insulating film to be in contact with the semiconductor film; and forming a light emitting element on the second insulating film. - View Dependent Claims (12, 13, 14)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsFukunaga, Takeshi, Koyama, Jun, Yamazaki, Shunpei, Inukai, Kazutaka
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Primary Examiner(s)Smith; Bradley K
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Assistant Examiner(s)Payen; Marvin
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Application NumberUS12/408,194Publication NumberTime in Patent Office585 DaysField of Search438/29, 438/151, 438/158, 438/164, 257/E21.158, 257/E21.411, 257/E33.055US Class Current438/29CPC Class CodesH01L 27/1214 comprising a plurality of T...H01L 27/1259 Multistep manufacturing met...H01L 27/127 with a particular formation...H10K 59/12 Active-matrix OLED [AMOLED]...
