Method of manufacturing semiconductor device and semiconductor device

• US 7,821,005 B2
• Filed: 04/17/2006
• Issued: 10/26/2010
• Est. Priority Date: 12/19/2000
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kajiwara, Masayuki, Koezuka, Junichi, Nakamura, Osamu, Yamazaki, Shunpei
• Primary Examiner(s): Purvis; Sue
• Assistant Examiner(s): Cruz; Leslie Pilar
• Application Number:
  US11/404,923
• Publication Number:
  US 20060255370A1
• Time in Patent Office: 1,653 Days
• Field of Search: 257/65, 257/66, 257/70, 257/72, 257/75, 257/347, 257/913, 257/E29.003, 257/E29.004, 257/E29.273, 257/E29.277
• US Class Current: 257/66
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: Y10S 257/913 with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering

Abstract

Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×10²⁰/cm³ or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group 18 of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.

Claims

1. A semiconductor device comprising:

a crystalline semiconductor film over a substrate;

a gate insulating film adjacent to the crystalline semiconductor film; and

a gate electrode adjacent to the gate insulating film,

wherein the crystalline semiconductor film comprises a channel forming region, a pair of first impurity regions including a one conductivity type impurity element adjacent to the channel forming region, and a pair of second impurity regions including the one conductivity type impurity element and sandwiching the channel forming region, and the pair of first impurity regions,

wherein the pair of second impurity regions are located on end portions of the crystalline semiconductor film, respectively,

wherein, in the crystalline semiconductor film, a noble gas element is only included in the second impurity regions, and

wherein an outer side surface of each of the second impurity regions is in contact with the gate insulating film.

2. The semiconductor device according to claim 1, wherein the noble gas element is at least one selected from the group consisting of helium, neon, argon, krypton, and xenon.

3. The semiconductor device according to claim 1, wherein the noble gas element is included in the crystalline semiconductor film at a concentration of 1×

10¹⁹ to 1×

10²¹/cm³.

4. The semiconductor device according to claim 1, wherein thickness of the crystalline semiconductor film is 10 to 100 nm.

5. A semiconductor device comprising:

a crystalline semiconductor film including a metal element over a substrate;

a gate insulating film adjacent to the crystalline semiconductor film; and

a gate electrode adjacent to the gate insulating film,

wherein the crystalline semiconductor film comprises a channel forming region, a pair of first impurity regions including a one conductivity type impurity element adjacent to the channel forming region, and a pair of second impurity regions including the one conductivity type impurity element and a noble gas element,

wherein the second impurity regions comprise the metal element at a higher concentration than the channel forming region and the first impurity regions,

wherein the pair of second impurity regions are sandwiching the channel forming region, and the pair of first impurity regions in the crystalline semiconductor film and each located on end portions of the crystalline semiconductor film,

wherein, in the crystalline semiconductor film, the noble gas element is only included in the second impurity regions, and

wherein an outer side surface of each of the second impurity regions is in contact with the gate insulating film.

6. The semiconductor device according to claim 5, wherein the metal element is at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

7. The semiconductor device according to claim 5, wherein the noble gas element is at least one selected from the group consisting of helium, neon, argon, krypton, and xenon.

8. The semiconductor device according to claim 5, wherein the noble gas element is included in the crystalline semiconductor film at a concentration of 1×

10¹⁹ to 1×

10²¹/cm³.

9. The semiconductor device according to claim 5, wherein thickness of the crystalline semiconductor film is 10 to 100 nm.

10. A semiconductor device comprising:

a crystalline semiconductor film including a metal element over a substrate;

a gate insulating film adjacent to the crystalline semiconductor film; and

a gate electrode adjacent to the gate insulating film,

wherein the crystalline semiconductor film comprises a channel forming region and source and drain regions, each of the source and drain regions including a one conductivity type impurity element and being adjacent to the channel forming region,

wherein the source and drain regions include the metal element at a higher concentration than the channel forming region,

wherein, in the crystalline semiconductor film, a noble gas element is included in only the source and drain regions, and

wherein the whole of the source and drain regions include the noble gas element.

11. The semiconductor device according to claim 10, wherein the metal element is at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

12. The semiconductor device according to claim 10, wherein the noble gas element is at least one selected from the group consisting of helium, neon, argon, krypton, and xenon.

13. The semiconductor device according to claim 10, wherein the noble gas element is included in the crystalline semiconductor film at a concentration of 1×

10¹⁹ to 1×

10²¹/cm³.

14. The semiconductor device according to claim 10, wherein thickness of the crystalline semiconductor film is 10 to 100 nm.

15. A semiconductor device comprising:

a blocking layer over a substrate

a crystalline semiconductor film on the blocking layer;

a gate insulating film adjacent to the crystalline semiconductor film;

a gate electrode adjacent to the gate insulating film;

a passivation film over, the crystalline semiconductor film, the gate insulating film, and the gate electrode,

wherein the crystalline semiconductor film comprises a channel forming region and source and drain regions adjacent to the channel forming region,

wherein the source and drain regions include a metal element at a higher concentration than the channel forming region,

wherein, in the crystalline semiconductor film, a noble gas element is included in only the source and drain regions, and

wherein the whole of the source and drain regions include the noble gas element.

16. The semiconductor device according to claim 15, wherein the noble gas element is at least one selected from the group consisting of helium, neon, argon, krypton, and xenon.

17. The semiconductor device according to claim 15, wherein the noble gas element is included in the crystalline semiconductor film at a concentration of 1×

10¹⁹ to 1×

10²¹/cm³.

18. The semiconductor device according to claim 15, wherein thickness of the crystalline semiconductor film is 10 to 100 nm.