Thin film transistor
First Claim
1. A thin film transistor comprising:
- a gate electrode layer;
a first insulating layer over the gate electrode layer;
a pair of second insulating layers over the first insulating layer, wherein the pair of second insulating layers is provided apart from each other in a channel length direction and overlaps with at least a part of the gate electrode layer;
a pair of microcrystalline semiconductor layers over the pair of second insulating layers, wherein the pair of microcrystalline semiconductor layers is provided apart from each other and in contact with the pair of second insulating layers;
an amorphous semiconductor layer over the first insulating layer, the pair of second insulating layers, and the pair of microcrystalline semiconductor layers, wherein a part of the amorphous semiconductor layer is provided between the pair of microcrystalline semiconductor layers; and
a pair of impurity semiconductor layers over the amorphous semiconductor layer, wherein the pair of impurity semiconductor layers overlaps with at least a part of the gate electrode layer and is provided apart from each other so as to form a source region and a drain region,wherein the first insulating layer is a silicon nitride layer, and each of the pair of second insulating layers is a silicon oxynitride layer.
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Accused Products
Abstract
A thin film transistor includes a first insulating layer covering the gate electrode layer; source and drain regions which at least partly overlaps with the gate electrode layer; a pair of second insulating layers which is provided apart from each other in a channel length direction over the first insulating layer and which at least partly overlaps with the gate electrode layer and the pair of impurity semiconductor layers; a pair of microcrystalline semiconductor layers provided apart from each other on and in contact with the second insulating layers; and an amorphous semiconductor layer covering the first insulating layer, the pair of second insulating layers, and the pair of microcrystalline semiconductor layers and which extends to exist between the pair of microcrystalline semiconductor layers. The first insulating layer is a silicon nitride layer and each of the pair of the second insulating layers is a silicon oxynitride layer.
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Citations
24 Claims
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1. A thin film transistor comprising:
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a gate electrode layer; a first insulating layer over the gate electrode layer; a pair of second insulating layers over the first insulating layer, wherein the pair of second insulating layers is provided apart from each other in a channel length direction and overlaps with at least a part of the gate electrode layer; a pair of microcrystalline semiconductor layers over the pair of second insulating layers, wherein the pair of microcrystalline semiconductor layers is provided apart from each other and in contact with the pair of second insulating layers; an amorphous semiconductor layer over the first insulating layer, the pair of second insulating layers, and the pair of microcrystalline semiconductor layers, wherein a part of the amorphous semiconductor layer is provided between the pair of microcrystalline semiconductor layers; and a pair of impurity semiconductor layers over the amorphous semiconductor layer, wherein the pair of impurity semiconductor layers overlaps with at least a part of the gate electrode layer and is provided apart from each other so as to form a source region and a drain region, wherein the first insulating layer is a silicon nitride layer, and each of the pair of second insulating layers is a silicon oxynitride layer. - View Dependent Claims (4, 7, 10, 13, 16, 19, 22)
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2. A thin film transistor comprising:
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a gate electrode layer; a first insulating layer over the gate electrode layer; an amorphous semiconductor layer over the first insulating layer and in contact with at least a part of the first insulating layer; a pair of impurity semiconductor layers over the amorphous semiconductor layer, wherein the pair of impurity semiconductor layers is provided apart from each other so as to form a source region and a drain region; a pair of second insulating layers between the first insulating layer and the amorphous semiconductor layer, wherein the pair of second insulating layers is provided apart from each other; and a pair of microcrystalline semiconductor layers on and in contact with the pair of the second insulating layers, wherein the pair of microcrystalline semiconductor layers is provided apart from each other and overlaps with at least a part of the pair of impurity semiconductor layers, wherein the first insulating layer is a silicon nitride layer and each of the pair of the second insulating layers is a silicon oxynitride layer. - View Dependent Claims (5, 8, 11, 14, 17, 20, 23)
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3. A thin film transistor comprising:
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a gate electrode layer; a first insulating layer over the gate electrode layer; a pair of second insulating layers over the first insulating layer, a pair of microcrystalline semiconductor layers on and in contact with the pair of second insulating layers; an amorphous semiconductor layer over the pair of microcrystalline semiconductor layers; and a source region and a drain region over the amorphous semiconductor layer, wherein a portion of the amorphous semiconductor layer is between the pair of microcrystalline semiconductor layers, and wherein the first insulating layer is a silicon nitride layer and each of the pair of second insulating layers is a silicon oxynitride layer. - View Dependent Claims (6, 9, 12, 15, 18, 21, 24)
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Specification