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Diode having vertical structure and method of manufacturing the same

  • US 7,821,021 B2
  • Filed: 11/07/2006
  • Issued: 10/26/2010
  • Est. Priority Date: 10/26/2001
  • Status: Expired due to Fees
First Claim
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1. A vertical light emitting device, comprising:

  • a GaN layer having a multilayer structure including an n-type layer, an active layer, and a p-type layer, the GaN layer having a first surface and a second surface;

    a conductive structure on the first surface of the GaN layer, wherein the conductive structure comprises a first electrode, wherein the first electrode is in contact with the first surface of the GaN layer, wherein the first electrode and the second surface of the GaN layer are configured such that the first electrode reflects light from the active layer back through the second surface of the GaN layer; and

    a second electrode in contact with the second surface of the GaN layer,wherein the conductive structure is located at the bottom of the light emitting device.

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