Diode having vertical structure and method of manufacturing the same
First Claim
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1. A vertical light emitting device, comprising:
- a GaN layer having a multilayer structure including an n-type layer, an active layer, and a p-type layer, the GaN layer having a first surface and a second surface;
a conductive structure on the first surface of the GaN layer, wherein the conductive structure comprises a first electrode, wherein the first electrode is in contact with the first surface of the GaN layer, wherein the first electrode and the second surface of the GaN layer are configured such that the first electrode reflects light from the active layer back through the second surface of the GaN layer; and
a second electrode in contact with the second surface of the GaN layer,wherein the conductive structure is located at the bottom of the light emitting device.
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Abstract
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
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Citations
28 Claims
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1. A vertical light emitting device, comprising:
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a GaN layer having a multilayer structure including an n-type layer, an active layer, and a p-type layer, the GaN layer having a first surface and a second surface; a conductive structure on the first surface of the GaN layer, wherein the conductive structure comprises a first electrode, wherein the first electrode is in contact with the first surface of the GaN layer, wherein the first electrode and the second surface of the GaN layer are configured such that the first electrode reflects light from the active layer back through the second surface of the GaN layer; and a second electrode in contact with the second surface of the GaN layer, wherein the conductive structure is located at the bottom of the light emitting device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A vertical light emitting device, comprising:
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a first GaN layer of a first conductivity; an active layer on the first GaN layer; a second GaN layer of a second conductivity on the active layer; a first electrode directly on the first GaN layer, wherein the first electrode reflects light from the active layer; a second electrode contacting a surface of the second GaN layer; and a pad over the second electrode, wherein the first electrode is configured to reflect light from the active layer back through the surface of the second GaN layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 28)
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27. A diode, comprising:
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a conductive structure; an n-GaN layer on the conductive structure; an active layer on the n-GaN layer; a p-GaN layer on the active layer; and a p-electrode contacting a surface of the p-GaN layer; wherein the conductive structure comprises an n-electrode, wherein the n-electrode is configured to reflect light from the active layer back through the surface of the p-GaN layer, and wherein the conductive structure is located at the bottom of the diode.
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Specification