Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same

• US 7,821,065 B2
• Filed: 03/01/2000
• Issued: 10/26/2010
• Est. Priority Date: 03/02/1999
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hirakata, Yoshiharu, Osame, Mitsuaki, Murakami, Satoshi, Koyama, Jun, Yamazaki, Shunpei, Tanaka, Yukio
• Primary Examiner(s): Lee; Eugene
• Application Number:
  US09/516,082
• Publication Number:
  US 20030057419A1
• Time in Patent Office: 3,891 Days
• Field of Search: 349/38, 257/72, 257/59, 257/98, 257/347, 257/E29.151, 438/149, 438/479, 438/517
• US Class Current: 257/347
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 31/02164 for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Abstract

An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability.

The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented.

Claims

1. A semiconductor device comprising:

a first thin film transistor formed over an insulating surface, the first thin film transistor comprising;

a semiconductor film comprising at least a channel forming region;

a gate insulating film adjacent to the channel forming region; and

a gate electrode adjacent to the channel forming region with the gate insulating film interposed therebetween;

a source wiring and a drain wiring electrically connected to the first thin film transistor;

a passivation film comprising a silicon nitride formed over the first thin film transistor;

a color filter formed over the passivation film, wherein a first opening is formed in the color filter;

an insulating film formed over the color filter, wherein a second opening is formed in the insulating film, and

a pixel electrode formed over the insulating film and electrically connected to the drain wiring through the first and second openings,

wherein the passivation film is interposed between the first thin film transistor and the color filter so that the drain wiring is not in contact with the color filter, and

wherein the pixel electrode is in contact with a portion of the color filter in the first opening,

wherein the pixel electrode overlaps with the source wiring and the drain wiring.

2. A device according to claim 1, wherein the semiconductor device further comprising:

an organic resin film over the color filter;

an electrode over the organic resin film; and

an oxide film of the electrode in direct contact with at least a portion of a surface of the electrode,

wherein the pixel electrode is in direct contact with at least a portion of the oxide film, and

wherein a storage capacitor comprises the electrode and the pixel electrode with the oxide film interposed therebetween.

3. A device according to claim 1, wherein the semiconductor film further comprises LDD regions between the channel forming region and the source and drain regions.

4. A device according to claim 1, further comprising a driver circuit comprising a second thin film transistor,

wherein the first thin film transistor is included in a pixel matrix circuit, and

wherein the pixel matrix circuit and the driver circuit are formed over the insulating surface.

5. A device according to claim 1, wherein the semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player that uses a recording medium, a camera, a projector, a portable telephone, a portable book and a display device.

6. A device according to claim 1 wherein said color filter has a flat upper surface.

7. A device according to claim 1, further comprising one or more gate electrodes in addition to the gate electrode.

8. A device according to claim 1, wherein the semiconductor device is incorporated in a display over diagonal 30 inch.

9. A device according to claim 1, wherein the color filter includes a flattening function.

10. A device according to claim 1,

wherein the color filter is colored with three colors R, and B,

wherein a R, G, B color matrix includes a stripe shape.

11. A semiconductor device comprising:

a first thin film transistor formed over an insulating surface, the first thin film transistor comprising;

a semiconductor film comprising at least a channel forming region;

a gate insulating film adjacent to the channel forming region; and

a gate electrode adjacent to the gate insulating film,

a source wiring and a drain wiring electrically connected to the first thin film transistor;

a gate wiring electrically connected to the gate electrode;

a passivation film comprising a silicon nitride formed over the first thin film transistor;

a color filter formed over the passivation film, wherein a first opening is formed in the color filter;

an insulating film formed over the color filter, wherein a second opening is formed in the insulating film, and

a pixel electrode formed over the insulating film and electrically connected to the drain wiring through the first and second openings,

wherein the second opening completely overlaps the first opening, and

wherein the pixel electrode is in contact with a portion of the color filter in the first opening,

wherein the pixel electrode overlaps with the source wiring, the drain wiring, and the gate wiring.

12. A device according to claim 11, further comprising a driver circuit comprising a second thin film transistor,

wherein the first thin film transistor is included in a pixel matrix circuit, and

wherein the pixel matrix circuit and the driver circuit are formed over the insulating surface.

13. A device according to claim 11, wherein the semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player that uses a recording medium, a camera, a projector, a portable telephone, a portable book and a display device.

14. A device according to claim 11 wherein said color filter has a flat upper surface.

15. A device according to claim 11, further comprising one or more gate electrodes in addition to the gate electrode.

16. A device according to claim 11, wherein the semiconductor device is incorporated in a display over diagonal 30 inch.

17. A device according to claim 11, wherein the color filter includes a flattening function.

18. A device according to claim 11,

wherein the color filter is colored with three colors R, G, and B,

wherein a R, G, B color matrix includes a stripe shape.

19. A semiconductor device comprising:

a first thin film transistor fanned over an insulating surface, the first thin film transistor comprising;

a semiconductor film comprising at least a channel forming region;

a gate insulating film adjacent to the channel forming region; and

a gate electrode adjacent to the channel forming region with the gate insulating film interposed therebetween;

a source wiring and a drain wiring electrically connected to the first thin film transistor;

a gate wiring electrically connected to the gate electrode;

a passivation film formed over the first thin film transistor;

a color filter formed over the passivation film, wherein a first opening is formed in the color filter;

an insulating film formed over the color filter, wherein a second opening is formed in the insulating film, and

a pixel electrode formed over the insulating film and electrically connected to the drain wiring through the first and second openings,

wherein the passivation film is interposed between the first thin film transistor and the color filter so that the drain wiring is not in contact with the color filter, and

wherein the pixel electrode is in contact with a portion of the color filter in the first opening,

wherein the pixel electrode overlaps with the source wiring, the drain wiring, and the gate wiring.

20. A device according to claim 19, wherein the semiconductor device further comprising:

an organic resin film over the color filter;

an electrode over the organic resin film; and

an oxide film of the electrode in direct contact with at least a portion of a surface of the electrode,

wherein the pixel electrode is in direct contact with at least a portion of the oxide film, and

wherein a storage capacitor comprises the electrode and the pixel electrode with the oxide film interposed therebetween.

21. A device according to claim 19, wherein the semiconductor film further comprises LDD regions between the channel forming region and the source and drain regions.

22. A device according to claim 19, further comprising a driver circuit comprising a second thin film transistor,

wherein the first thin film transistor is included in a pixel matrix circuit, and

wherein the pixel matrix circuit and the driver circuit are formed over the insulating surface.

23. A device according to claim 19, wherein the semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player that uses a recording medium, a camera, a projector, a portable telephone, a portable book and a display device.

24. A device according to claim 19 wherein said color filter has a flat upper surface.

25. A device according to claim 19, further comprising one or more gate electrodes in addition to the gate electrode.

26. A device according to claim 19, wherein the semiconductor device is incorporated in a display over diagonal 30 inch.

27. A device according to claim 19, wherein the color filter includes a flattening function.

28. A device according to claim 19,

wherein the color filter is colored with three colors R, G, and B,

wherein a R, B color matrix includes a stripe shape.

29. A semiconductor device comprising:

a first thin film transistor formed over an insulating surface, the first thin film transistor comprising;

a semiconductor film comprising;

a channel forming region; and

a source region and a drain region;

a gate insulating film adjacent to the channel forming region; and

a gate electrode adjacent to the gate insulating film;

a source wiring and a drain wiring electrically connected to the first thin film transistor;

a passivation film comprising a silicon nitride film formed over the first thin film transistor;

a color filter formed over the passivation film, wherein a first opening is formed in the color filter;

an insulating film formed over the color filter, wherein a second opening is formed in the insulating film, and

a pixel electrode formed over the insulating film and electrically connected to the drain wiring through the first and second openings,

wherein the passivation film is interposed between the first thin film transistor and the color filter so that the drain wiring is not in contact with the color filter, and

wherein the pixel electrode is in contact with a portion of the color filter in the first opening,

wherein the pixel electrode overlaps with the source wiring and the drain wiring.

30. A device according to claim 29, wherein the semiconductor film comprises crystalline silicon.

31. A device according to claim 29, wherein the semiconductor film further comprises LDD regions between the channel forming region and the source and drain regions.

32. A device according to claim 29, further comprising a driver circuit comprising a second thin film transistor,

wherein the first thin film transistor is included in a pixel matrix circuit, and

wherein the pixel matrix circuit and the driver circuit are formed over the insulating surface.

33. A device according to claim 29, wherein the semiconductor device is selected from the group consisting of a personal computer;

a video camera, a mobile computer, a goggle type display, a player that uses a recording medium, a camera, a projector, a portable telephone, a portable book and a display device.

34. A device according to claim 29 wherein said color filter has a flat upper surface.

35. A device according to claim 29, further comprising one or more gate electrodes in addition to the gate electrode.

36. A device according to claim 29, wherein the semiconductor device is incorporated in a display over diagonal 30 inch.

37. A device according to claim 29, wherein the color filter includes a flattening function.

38. A device according to claim 29,

wherein the color filter is colored with three colors R, G, and B,

wherein a R, B color matrix includes a stripe shape.

39. A semiconductor device comprising:

a first thin film transistor formed over an insulating surface, the first thin film transistor comprising;

a semiconductor film comprising;

a channel forming region; and

a source region and a drain region;

a gate insulating film adjacent to the channel fowling region; and

a gate electrode adjacent to the channel forming region with the gate insulating film interposed therebetween;

a source wiring and a drain wiring electrically connected to the first thin film transistor;

a passivation film comprising a silicon nitride film formed over the first thin film transistor;

a color filter formed over the passivation film, wherein a first opening is formed in the color filter;

an insulating film formed over the color filter, wherein a second opening is formed in the insulating film, and

a pixel electrode formed over the insulating film and electrically connected to the drain wiring through the first and second openings,

wherein the second opening completely overlaps the first opening, and

wherein the pixel electrode is in contact with a portion of the color filter in the first opening,

wherein the pixel electrode overlaps with the source wiring and the drain wiring.

40. A device according to claim 39, wherein the semiconductor film comprises crystalline silicon.

41. A device according to claim 39, wherein the semiconductor film further comprises LDD regions between the channel forming region and the source and drain regions.

42. A device according to claim 39, further comprising a driver circuit comprising a second thin film transistor,

wherein the first thin film transistor is included in a pixel matrix circuit, and

wherein the pixel matrix circuit and the driver circuit are formed over the insulating surface.

43. A device according to claim 39, wherein the semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player that uses a recording medium, a camera, a projector, a portable telephone, a portable book and a display device.

44. A device according to claim 39 wherein said color filter has a flat upper surface.

45. A device according to claim 39, further comprising one or more gate electrodes in addition to the gate electrode.

46. A device according to claim 39, wherein the semiconductor device is incorporated in a display over diagonal 30 inch.

47. A device according to claim 39, wherein the color filter includes a flattening function.

48. A device according to claim 39,

wherein the color filter is colored with three colors R, G and B,

wherein a R, B color matrix includes a stripe shape.

53. A device according to claim 39 wherein said color filter has a flat upper surface.

49. A semiconductor device comprising:

a first thin film transistor comprising;

a semiconductor film comprising;

a channel forming region; and

a source region and a drain region;

a gate insulating film adjacent to the channel forming region; and

a gate electrode adjacent to the channel forming region with the gate insulating film interposed therebetween;

a source wiring and a drain wiring electrically connected to the first thin film transistor;

a passivation film formed over the first thin film transistor, the passivation film comprising at least a material selected from the group consisting of silicon nitride, silicon oxide and nitrated silicon oxide;

a color filter formed over the passivation film, wherein a first opening is formed in the color filter;

an insulating film formed over the color filter, wherein a second opening is formed in the insulating film, and

a pixel electrode formed over the insulating film and electrically connected to the drain wiring through the first and second openings,

wherein the passivation film is interposed between the first thin film transistor and the color filter so that the drain wiring is not in contact with the color filter, and

wherein the pixel electrode is in contact with a portion of the color filter in the first opening,

wherein the pixel electrode overlaps with the source wiring and the drain wiring.

50. A device according to claim 49, wherein the semiconductor film comprises crystalline silicon.

51. A device according to claim 49, further comprising a driver circuit comprising a second thin film transistor,

wherein the first thin film transistor is included in a pixel matrix circuit, and

wherein the pixel matrix circuit and the driver circuit are formed over an insulating surface.

52. A device according to claim 49, wherein the semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player that uses a recording medium, a camera, a projector, a portable telephone, a portable book and a display device.

54. A device according to claim 49, further comprising one or more gate electrodes in addition to the gate electrode.

55. A device according to claim 49, wherein the semiconductor device is incorporated in a display over diagonal 30 inch.

56. A device according to claim 49, wherein the color filter includes a flattening function.

57. A device according to claim 49,

wherein the color filter is colored with three colors R, G, and B,

wherein a R, G, B color matrix includes a stripe shape.

58. A semiconductor device comprising:

a first thin film transistor comprising;

a semiconductor film comprising a channel forming region, a source region, and a drain region, the semiconductor film comprising silicon;

a gate insulating film adjacent to the channel forming region; and

a gate electrode adjacent to the channel forming region with the gate insulating film interposed therebetween;

a source wiring and a drain wiring electrically connected to the first thin film transistor;

a passivation film formed over the first thin film transistor, the passivation film comprising at least a material selected from the group consisting of silicon nitride, silicon oxide and nitrated silicon oxide;

a color filter formed over the passivation film, wherein a first opening is formed in the color filter;

an insulating film formed over the color filter, wherein a second opening is formed in the insulating film, and

a pixel electrode formed over the insulating film and electrically connected to the drain wiring through the first and second openings,

wherein the second opening completely overlaps the first opening, and

wherein the pixel electrode is in contact with a portion of the color filter in the first opening,

wherein the pixel electrode overlaps with the source wiring and the drain wiring.

59. A device according to claim 58, wherein the semiconductor film comprises crystalline silicon.

60. A device according to claim 58, further comprising a driver circuit comprising a second thin film transistor,

wherein the first thin film transistor is included in a pixel matrix circuit, and

wherein the pixel matrix circuit and the driver circuit are formed over an insulating surface.

61. A device according to claim 58, wherein the semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player that uses a recording medium, a camera, a projector, a portable telephone, a portable book and a display device.

62. A device according to claim 58 wherein said color filter has a flat upper surface.

63. A device according to claim 58, further comprising one or more gate electrodes in addition to the gate electrode.

64. A device according to claim 58, wherein the semiconductor device is incorporated in a display over diagonal 30 inch.

65. A device according to claim 58, wherein the color filter includes a flattening function.

66. A device according to claim 58,

wherein the color filter is colored with three colors R, G and B,

wherein a R, G, B color matrix includes a stripe shape.