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Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same

  • US 7,821,065 B2
  • Filed: 03/01/2000
  • Issued: 10/26/2010
  • Est. Priority Date: 03/02/1999
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a first thin film transistor formed over an insulating surface, the first thin film transistor comprising;

    a semiconductor film comprising at least a channel forming region;

    a gate insulating film adjacent to the channel forming region; and

    a gate electrode adjacent to the channel forming region with the gate insulating film interposed therebetween;

    a source wiring and a drain wiring electrically connected to the first thin film transistor;

    a passivation film comprising a silicon nitride formed over the first thin film transistor;

    a color filter formed over the passivation film, wherein a first opening is formed in the color filter;

    an insulating film formed over the color filter, wherein a second opening is formed in the insulating film, anda pixel electrode formed over the insulating film and electrically connected to the drain wiring through the first and second openings,wherein the passivation film is interposed between the first thin film transistor and the color filter so that the drain wiring is not in contact with the color filter, andwherein the pixel electrode is in contact with a portion of the color filter in the first opening,wherein the pixel electrode overlaps with the source wiring and the drain wiring.

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