Patterned backside stress engineering for transistor performance optimization
First Claim
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1. An apparatus comprising:
- a first surface of a substrate haying a first transistor type region and a second transistor type region; and
a heat spreader attached to a substrate surface opposite the first surface, the heat spreader having a portion opposite the first transistor type region that is thinner than a portion opposite the second transistor type region, wherein the portion opposite the first transistor type region is about 0.1 to 1.25 mm thick and the portion opposite the second transistor type region is about 1.25 to 2.75 mm thick.
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Abstract
Some embodiments of the present invention include selectively inducing back side stress opposite transistor regions to optimize transistor performance.
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Citations
5 Claims
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1. An apparatus comprising:
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a first surface of a substrate haying a first transistor type region and a second transistor type region; and a heat spreader attached to a substrate surface opposite the first surface, the heat spreader having a portion opposite the first transistor type region that is thinner than a portion opposite the second transistor type region, wherein the portion opposite the first transistor type region is about 0.1 to 1.25 mm thick and the portion opposite the second transistor type region is about 1.25 to 2.75 mm thick.
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2. An apparatus comprising:
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a first surface of a substrate having a first transistor type region and a second transistor type region; and a heat spreader attached to a substrate surface opposite the first surface, the heat spreader having a portion opposite the first transistor type region that is thinner than a portion opposite the second transistor type region, wherein the portion opposite the first transistor type region is about 0.25 to 1.1 mm thick and the portion opposite the second transistor type region is about 1.25 to 2.75mm thick.
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3. An apparatus comprising:
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a first surface of a substrate haying a first transistor type region and a second transistor type region; and a heat spreader attached to a substrate surface opposite the first surface, the heat spreader haying a portion opposite the first transistor type re gion that is thinner than a portion opposite the second transistor type region, wherein the portion opposite the first transistor type region is about 0.5 to 1.0 mm thick and the portion opposite the second transistor type region is about 1.5 to 2.5 mm thick. - View Dependent Claims (4, 5)
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Specification