Semiconductor device
First Claim
Patent Images
1. A semiconductor device comprising:
- an element isolation structure in which trenches formed in an element isolation region on a semiconductor substrate are filled up with insulating materials;
a first conductivity type element formed in a first active region divided by said element isolation structure; and
a second conductivity type element formed in a second active region divided by said element isolation structure,said element isolation structure comprising;
a first element isolation region of said element isolation region including regions adjacent to a pair of opposed ends of said second active region, said first element isolation region being filled with a first insulating materiala second element isolation region of said element isolation;
other than said first element isolation region, said second element isolation region being filled with a second insulating material which is sparser than the first insulating material;
an upper layer portion of said first element isolation region is filled with said first insulating material; and
said first insulating material is an HDP silicon oxide and said second insulating material is nano clustering silica (NCS); and
wherein said first element isolation region is entirely surrounded by said first active region, said second active region and said second element isolation region.
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Abstract
The active region of an NMOS transistor and the active region of a PMOS transistor are divided by an STI element isolation structure. The STI element isolation structure is made up of a first element isolation structure formed so as to include the interval between both active regions, and a second element isolation structure formed in the region other than the first element isolation structure.
14 Citations
13 Claims
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1. A semiconductor device comprising:
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an element isolation structure in which trenches formed in an element isolation region on a semiconductor substrate are filled up with insulating materials; a first conductivity type element formed in a first active region divided by said element isolation structure; and a second conductivity type element formed in a second active region divided by said element isolation structure, said element isolation structure comprising; a first element isolation region of said element isolation region including regions adjacent to a pair of opposed ends of said second active region, said first element isolation region being filled with a first insulating material a second element isolation region of said element isolation;
other than said first element isolation region, said second element isolation region being filled with a second insulating material which is sparser than the first insulating material;an upper layer portion of said first element isolation region is filled with said first insulating material; and said first insulating material is an HDP silicon oxide and said second insulating material is nano clustering silica (NCS); and wherein said first element isolation region is entirely surrounded by said first active region, said second active region and said second element isolation region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification