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Semiconductor integrated circuit and system LSI including the same

  • US 7,821,096 B2
  • Filed: 04/06/2007
  • Issued: 10/26/2010
  • Est. Priority Date: 04/27/2006
  • Status: Active Grant
First Claim
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1. A semiconductor integrated circuit, comprising:

  • a diode including a first polarity-type diffusion layer and a second polarity-type diffusion layer which is disposed next to the first polarity-type diffusion layer in a first direction in a plan view; and

    a second polarity-type contact region surrounding, in a plan view, four sides of the diode including the first polarity-type diffusion layer and the second polarity-type diffusion layer, the contact region having a first contact region extending along the first direction and a second contact region extending along a second direction perpendicular to the first direction in a plan view,wherein each of the first polarity-type diffusion layer and second polarity-type diffusion layer of the diode has a plurality of contact holes for electrical connection with an external device, andthe second contact region extending along the second direction of the contact region has a plurality of contact holes and the first contact region extending along the first direction has no contact hole, in a plan view.

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