Semiconductor integrated circuit and system LSI including the same
First Claim
1. A semiconductor integrated circuit, comprising:
- a diode including a first polarity-type diffusion layer and a second polarity-type diffusion layer which is disposed next to the first polarity-type diffusion layer in a first direction in a plan view; and
a second polarity-type contact region surrounding, in a plan view, four sides of the diode including the first polarity-type diffusion layer and the second polarity-type diffusion layer, the contact region having a first contact region extending along the first direction and a second contact region extending along a second direction perpendicular to the first direction in a plan view,wherein each of the first polarity-type diffusion layer and second polarity-type diffusion layer of the diode has a plurality of contact holes for electrical connection with an external device, andthe second contact region extending along the second direction of the contact region has a plurality of contact holes and the first contact region extending along the first direction has no contact hole, in a plan view.
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Accused Products
Abstract
A semiconductor integrated circuit having a diode element includes a diffusion layer which constitutes the anode and two diffusion layers which are provided on the left and right sides of the anode and which constitute the cathode, such that the anode and the cathode constitute the diode. A well contact is provided to surround both the diffusion layers of the anode and cathode. Distance tS between a longer side of the well contact and the diffusion layers of the cathode is shorter, while distance tL between a shorter side of the well contact and the diffusion layers of the anode and cathode is longer (tL>tS). Accordingly, the resistance value between the diffusion layer of the anode and the shorter side of the well contact is larger, so that the current from the diffusion layer of the anode is unlikely to flow toward the shorter side of the well contact. Thus, convergence of the current at the contact holes of the diffusion layer of the anode is reduced, so that the reliability of the diode element improves.
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Citations
19 Claims
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1. A semiconductor integrated circuit, comprising:
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a diode including a first polarity-type diffusion layer and a second polarity-type diffusion layer which is disposed next to the first polarity-type diffusion layer in a first direction in a plan view; and a second polarity-type contact region surrounding, in a plan view, four sides of the diode including the first polarity-type diffusion layer and the second polarity-type diffusion layer, the contact region having a first contact region extending along the first direction and a second contact region extending along a second direction perpendicular to the first direction in a plan view, wherein each of the first polarity-type diffusion layer and second polarity-type diffusion layer of the diode has a plurality of contact holes for electrical connection with an external device, and the second contact region extending along the second direction of the contact region has a plurality of contact holes and the first contact region extending along the first direction has no contact hole, in a plan view. - View Dependent Claims (2, 8, 11, 14, 17)
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3. A semiconductor integrated circuit, comprising:
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a diode including a first polarity-type diffusion layer and a second polarity-type diffusion layer which is disposed next to the first polarity-type diffusion layer in a first direction in a plan view; and a second polarity-type contact region extending along a second direction perpendicular to the first direction in a plan view and disposed next to the second polarity-type diffusion layer of the diode in the first direction, wherein each of the first polarity-type diffusion layer and second polarity-type diffusion layer of the diode and the contact region has a plurality of contact holes for electrical connection with an external device. - View Dependent Claims (9, 12, 15, 18)
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4. A semiconductor integrated circuit, comprising:
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a diode including a first polarity-type diffusion layer which and a second polarity-type diffusion layer which is disposed next to the first polarity-type diffusion layer in a first direction in a plan view; and a second polarity-type contact region surrounding, in a plan view, four sides of the diode including the first polarity-type diffusion layer and the second polarity-type diffusion layer, the contact region having a first contact region extending along the first direction and a second contact region extending along a second direction perpendicular to the first direction in a plan view, wherein each of the first polarity-type diffusion layer and second polarity-type diffusion layer of the diode and contact region has a plurality of contact holes for electrical connection with an external device, and a first distance between a nearest periphery of the diode and the first contact region of the contact region is larger than a second distance between a nearest periphery of the diode and the second contact region of the contact region. - View Dependent Claims (5, 6, 7, 10, 13, 16, 19)
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Specification