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Semiconductor device with improved stress migration resistance and manufacturing process therefor

  • US 7,821,135 B2
  • Filed: 05/09/2005
  • Issued: 10/26/2010
  • Est. Priority Date: 04/26/2002
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising a semiconductor substrate having a metal region, wherein the metal region comprises an alloy containing copper and silver and has a silver content equal to more than 1 wt % of the total amount of component metals in the metal region.

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