Semiconductor device with improved stress migration resistance and manufacturing process therefor
First Claim
1. A semiconductor device comprising a semiconductor substrate having a metal region, wherein the metal region comprises an alloy containing copper and silver and has a silver content equal to more than 1 wt % of the total amount of component metals in the metal region.
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Accused Products
Abstract
A semiconductor device of improved stress-migration resistance and reliability includes an insulating film having formed therein a lower interconnection consisting of a barrier metal film and a copper-silver alloy film, on which is then formed an interlayer insulating film. In the interlayer insulating film is formed an upper interconnection consisting of a barrier metal film and a copper-silver alloy film. The lower and the upper interconnections are made of a copper-silver alloy which contains silver in an amount more than a solid solution limit of silver to copper.
30 Citations
16 Claims
- 1. A semiconductor device comprising a semiconductor substrate having a metal region, wherein the metal region comprises an alloy containing copper and silver and has a silver content equal to more than 1 wt % of the total amount of component metals in the metal region.
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2. A semiconductor device comprising a semiconductor substrate having a metal region, wherein the metal region comprises an alloy containing copper and silver;
- and a silver content to the total amount of component metals in the metal region is more than a solid solution limit of silver to copper.
- View Dependent Claims (8)
- 3. A semiconductor device comprising a semiconductor substrate having a metal region comprising an alloy containing copper and silver, wherein a maximum hysteresis error in a temperature-stress curve in the metal region is 150 MPa or less.
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4. A semiconductor device comprising a semiconductor substrate having a metal region comprising an alloy containing copper and silver, wherein a recrystallization temperature of a component metal of the metal region is 200 °
- C. or higher.
- View Dependent Claims (10)
- 11. A semiconductor device comprising a semiconductor substrate having a metal region, wherein the metal region comprises a silver-containing homogeneous metal alloy of copper and silver having a silver content equal to more than 1 wt % of the total amount of component metals in the metal region.
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12. A semiconductor device comprising a semiconductor substrate having a metal region, wherein the metal region comprises a homogenous alloy of copper and silver;
- and a silver content to the total amount of component metals in the metal region is more than a solid solution limit of silver to copper.
- View Dependent Claims (14, 16)
Specification