Display device and manufacturing method thereof

• US 7,821,613 B2
• Filed: 12/21/2006
• Issued: 10/26/2010
• Est. Priority Date: 12/28/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime
• Primary Examiner(s): Nguyen; Dung T
• Assistant Examiner(s): DUONG, TAI V
• Application Number:
  US11/614,809
• Publication Number:
  US 20070146592A1
• Time in Patent Office: 1,405 Days
• Field of Search: 349/42, 349/43, 349/113, 349/114, 349/187, 438/30, 430/5, 430/321, 257/43, 257/59, 257/72
• US Class Current: 349/187
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 1/1333 Constructional arrangements; Manufacturing methodsG02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133371 Cells with varying thickness of the liquid crystal layer
• CPC Class Codes: G02F 1/133555 Transflectors
• CPC Class Codes: G02F 1/136231 for reducing the number of lithographic steps
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2202/36 Micro- or nanomaterials

Abstract

In a semi-transmission liquid crystal display device, two resist masks are required to form a reflective electrode and a transparent electrode; therefore, cost is high. A transparent electrode and a reflective electrode which function as a pixel electrode are stacked. A resist pattern which includes a region having a thick film thickness and a region having a thinner film thickness than the aforementioned region is formed over the reflective electrode by using a light exposure mask which includes a semi-transmission portion. The reflective electrode and the transparent electrode are formed by using the resist pattern. Therefore, the reflective electrode and the transparent electrode can be formed by using one resist mask.

Claims

1. A manufacturing method of a display device, comprising the steps of:

forming a transistor over a substrate;

forming an insulating film over the transistor;

forming a transparent conductive film over the insulating film;

forming a reflective conductive film over the transparent conductive film;

forming a resist pattern which comprises a region having a thick film thickness and a region having a thinner film thickness than the region over the reflective conductive film by using a light exposure mask which comprises a semi-transmission portion;

forming a transparent electrode and a reflective electrode by etching the transparent conductive film and the reflective conductive film using the resist pattern;

providing a second substrate on which an opposite electrode is formed; and

providing a liquid crystal layer between the opposite electrode and a pixel electrode including the transparent electrode and the reflective electrode,

wherein a film for adjusting a cell gap is provided on the opposite electrode.

2. The manufacturing method of the display device according to claim 1, wherein the transistor includes a compound semiconductor.

3. The manufacturing method of the display device according to claim 2, wherein the transistor compound semiconductor is InGaZnO.

4. The manufacturing method of the display device according to claim 3, wherein InGaZnO is a-InGaZnO.

5. A manufacturing method of a display device, comprising the steps of:

forming a transistor over a substrate;

forming an insulating film over the transistor;

forming a transparent conductive film over the insulating film;

forming a reflective conductive film over the transparent conductive film;

forming a resist pattern which comprises a region having a thick film thickness and a region having a thinner film thickness than the region over the reflective conductive film by using a light exposure mask which comprises a semi-transmission portion;

etching the reflective conductive film and the transparent conductive film by using the resist pattern;

removing a part of the resist pattern;

etching the reflective conductive film by using the resist pattern after removing the part of the resist pattern;

providing a second substrate on which an opposite electrode is formed; and

providing a liquid crystal layer between the opposite electrode and a pixel electrode including the transparent conductive film and the reflective conductive film,

wherein a film for adjusting a cell gap is provided on the opposite electrode.

6. The manufacturing method of the display device according to claim 5, wherein the transistor includes a compound semiconductor.

7. The manufacturing method of the display device according to claim 6, wherein the compound semiconductor is InGaZnO.

8. The manufacturing method of the display device according to claim 7, wherein InGaZnO is a-InGaZnO.

9. A manufacturing method of a display device, comprising the steps of:

forming a transistor over a first substrate;

forming an insulating film over the transistor;

forming a transparent conductive film over the insulating film;

forming a reflective conductive film over the transparent conductive film;

forming a resist pattern which comprises a region having a thick film thickness and a region having a thinner film thickness than the region over the reflective conductive film by using a light exposure mask which comprises a semi-transmission portion; and

forming a transparent electrode and a reflective electrode by etching the transparent conductive film and the reflective conductive film using the resist pattern;

providing a second substrate on which an opposite electrode is formed; and

providing a liquid crystal layer between the opposite electrode and a pixel electrode including the transparent electrode and the reflective electrode,

wherein a film for adjusting a cell gap is provided between the opposite electrode and the second substrate.

10. The manufacturing method of the display device according to claim 9, wherein the transistor includes a compound semiconductor.

11. The manufacturing method of the display device according to claim 10, wherein the compound semiconductor is InGaZnO.

12. The manufacturing method of the display device according to claim 11, wherein InGaZnO is a-InGaZnO.

13. A manufacturing method of a display device, comprising the steps of:

forming a transistor over a first substrate;

forming an insulating film over the transistor;

forming a transparent conductive film over the insulating film;

forming a reflective conductive film over the transparent conductive film;

forming a resist pattern which comprises a region having a thick film thickness and a region having a thinner film thickness than the region over the reflective conductive film by using a light exposure mask which comprises a semi-transmission portion;

etching the reflective conductive film and the transparent conductive film by using the resist pattern;

removing a part of the resist pattern; and

etching the reflective conductive film by using the resist pattern after removing the part of the resist pattern; and

providing a second substrate on which an opposite electrode is formed; and

providing a liquid crystal layer between the opposite electrode and a pixel electrode including the transparent conductive film and the reflective conductive film

wherein a film for adjusting a cell gap is provided between the opposite electrode and the second substrate.

14. The manufacturing method of the display device according to claim 13, wherein the transistor includes a compound semiconductor.

15. The manufacturing method of the display device according to claim 14, wherein the compound semiconductor is InGaZnO.

16. The manufacturing method of the display device according to claim 15, wherein InGaZnO is a-InGaZnO.