Semiconductor layer structure with superlattice
First Claim
1. A semiconductor layer structure, comprising a superlattice composed of alternately stacked layers of III-V compound semiconductors of a first composition and at least one second composition, wherein said layers contain dopants in predetermined concentrations, said concentrations of said dopants are different in at least two layers of a same composition in said superlattice, said concentration of said dopants is graded within at least one said layer of said superlattice, said superlattice comprises layers that are doped with different dopants and said superlattice comprises at least one layer that is undoped.
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Abstract
The semiconductor layer structure comprises a superlattice (9) composed of alternately stacked layers (9a, 9b) of III-V semiconductor compounds of a first composition (a) and at least one second composition (b). The layers (9a, 9b) of the superlattice (9) contain dopants in predetermined concentrations, with regard to which the concentrations of the dopants are different at least two layers of a same composition in the superlattice (9), the concentration of the dopants is graded within at least one layer (9a, 9b) of the superlattice (9), and the superlattice (9) comprises layers that are doped with different dopants or comprise at least one layer (9a, 9b) that is undoped. The electrical and optical properties of the superlattice (9) can be adapted to given requirements in the best possible manner in this way.
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Citations
19 Claims
- 1. A semiconductor layer structure, comprising a superlattice composed of alternately stacked layers of III-V compound semiconductors of a first composition and at least one second composition, wherein said layers contain dopants in predetermined concentrations, said concentrations of said dopants are different in at least two layers of a same composition in said superlattice, said concentration of said dopants is graded within at least one said layer of said superlattice, said superlattice comprises layers that are doped with different dopants and said superlattice comprises at least one layer that is undoped.
- 2. A semiconductor layer structure, comprising a superlattice composed of alternately stacked layers of III-V compound semiconductors of a first composition and at least one second composition, wherein said layers contain dopants in predetermined concentrations, said concentrations of said dopants are different in at least two layers of a same composition in said superlattice, and said concentration of said dopants is graded within at least one said layer of said superlattice, and wherein said superlattice comprises at least one layer that is undoped.
Specification