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Semiconductor layer structure with superlattice

  • US 7,822,089 B2
  • Filed: 07/20/2007
  • Issued: 10/26/2010
  • Est. Priority Date: 07/27/2006
  • Status: Active Grant
First Claim
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1. A semiconductor layer structure, comprising a superlattice composed of alternately stacked layers of III-V compound semiconductors of a first composition and at least one second composition, wherein said layers contain dopants in predetermined concentrations, said concentrations of said dopants are different in at least two layers of a same composition in said superlattice, said concentration of said dopants is graded within at least one said layer of said superlattice, said superlattice comprises layers that are doped with different dopants and said superlattice comprises at least one layer that is undoped.

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