Method and apparatus for performing dark field double dipole lithography (DDL)

• US 7,824,826 B2
• Filed: 04/06/2007
• Issued: 11/02/2010
• Est. Priority Date: 04/06/2006
• Status: Expired due to Fees

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Masktools B.V. (ASML Holding NV)
• Inventors: Park, Sangbong, Chen, Jang Fung, Van Den Broeke, Douglas, Hsu, Duan-Fu Stephen
• Primary Examiner(s): Huff; Mark F
• Assistant Examiner(s): Ruggles; John
• Application Number:
  US11/783,261
• Publication Number:
  US 20080020296A1
• Time in Patent Office: 1,306 Days
• Field of Search: 430/5, 430/311, 716 19- 21
• US Class Current: 430/5
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70466 Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature stitching G03F7/70475

Abstract

A method of generating complementary dark field masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

This method is enabled by a non-transitory computer readable medium configured to store program instructions for execution by a processor. The complementary dark field masks are used for patterning a layer of radiation-sensitive material in a device manufacturing method.

Claims

1. A method of generating complementary masks for use in a dark field double dipole imaging process, said method comprising the steps of:

identifying a target pattern having a plurality of features, said plurality of features comprising horizontal and vertical features,

generating a horizontal dark field mask based on said target pattern, said horizontal dark field mask including low contrast features, said generation of said horizontal dark field mask comprising the steps of;

optimizing the bias of said low contrast features contained in said horizontal dark field mask; and

applying assist features to said horizontal dark field mask; and

generating a vertical dark field mask based on said target pattern, said vertical dark field mask containing low contrast features, said generation of said vertical dark field mask comprising the steps of;

optimizing the bias of low contrast features contained in said vertical dark field mask;

applying assist features to said vertical dark field mask.

2. The method of generating complementary masks for use in a dark field double dipole imaging process according to claim 1, wherein said step of optimizing the bias of said low contrast features includes the step of adjusting the width of the vertical features contained in said horizontal dark field mask so as to maximize one or more imaging performance criteria.

3. The method of generating complementary masks for use in a dark field double dipole imaging process according to claim 1, wherein the step of generating a horizontal dark field mask further includes the step of re-performing the step of optimizing the bias of said low contrast features after the step of applying said assist features to said horizontal dark field mask.

4. The method of generating complementary masks for use in a dark field double dipole imaging process according to claim 1, wherein the step of generating a horizontal dark field mask further includes the step of performing model OPC on said horizontal dark field mask.

5. The method of generating complementary masks for use in a dark field double dipole imaging process according to claim 1, wherein said step of optimizing the bias of said low contrast features includes the step of adjusting the width of the horizontal features contained in said vertical dark field mask so as to maximize one or more imaging performance criteria.

6. The method of generating complementary masks for use in a dark field double dipole imaging process according to claim 1, wherein the step of generating said vertical dark field mask further includes the step of re-performing the step of optimizing the bias of said low contrast features after the step of applying said assist features to said vertical dark field mask.

7. The method of generating complementary masks for use in a dark field double dipole imaging process according to claim 1, wherein the step of generating a vertical dark field mask further includes the step of performing model OPC on said vertical dark field mask.

8. A device manufacturing method comprising the steps of:

(a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material;

(b) providing a projection beam of radiation using a radiation system;

(c) using patterning means to endow the projection beam with a pattern in its cross-section;

(d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material,

wherein the patterning means of step (c) is generated using a method according to claim 1.

9. A non-transitory computer readable medium configured to store program instructions for execution by a processor, said program instructions enabling the processor to generate files corresponding to complementary masks for use in a dark field double dipole imaging process, said generation of said files comprising the steps of:

identifying a target pattern having a plurality of features, said plurality of features comprising horizontal and vertical features,

generating a horizontal dark field mask based on said target pattern, said horizontal dark field mask including low contrast features, said generation of said horizontal dark field mask comprising the steps of;

optimizing the bias of said low contrast features contained in said horizontal dark field mask; and

applying assist features to said horizontal dark field mask; and

generating a vertical dark field mask based on said target pattern, said vertical dark field mask containing low contrast features, said generation of said vertical dark field mask comprising the steps of;

optimizing the bias of low contrast features contained in said vertical dark field mask;

applying assist features to said vertical dark field mask.

10. The non-transitory computer readable medium according to claim 9, wherein said step of optimizing the bias of said low contrast features includes the step of adjusting the width of the vertical features contained in said horizontal dark field mask so as to maximize one or more imaging performance criteria.

11. The non-transitory computer readable medium according to claim 9, wherein the step of generating a horizontal dark field mask further includes the step of re-performing the step of optimizing the bias of said low contrast features after the step of applying said assist features to said horizontal dark field mask.

12. The non-transitory computer readable medium according to claim 9, wherein the step of generating a horizontal dark field mask further includes the step of performing model OPC on said horizontal dark field mask.

13. The non-transitory computer readable medium according to claim 9, wherein said step of optimizing the bias of said low contrast features includes the step of adjusting the width of the horizontal features contained in said vertical dark field mask so as to maximize one or more imaging performance criteria.

14. The non-transitory computer readable medium according to claim 9, wherein the step of generating said vertical dark field mask further includes the step of re-performing the step of optimizing the bias of said low contrast features after the step of applying said assist features to said vertical dark field mask.

15. The non-transitory computer readable medium according to claim 9, wherein the step of generating a vertical dark field mask further includes the step of performing model OPC on said vertical dark field mask.