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Producing a thin film transistor substrate by using a photoresist pattern having regions of different thicknesses

  • US 7,824,972 B2
  • Filed: 11/13/2007
  • Issued: 11/02/2010
  • Est. Priority Date: 11/20/2006
  • Status: Expired due to Fees
First Claim
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1. A method of producing a thin film transistor substrate, the method comprising:

  • forming a gate wiring line comprising a gate electrode on an insulating substrate;

    forming a data wiring line comprising a source electrode and a drain electrode on the gate wiring line;

    forming a passivation layer pattern on the data wiring line except for a part of the drain electrode and a pixel region; and

    forming a pixel electrode electrically connected to the drain electrode and comprising aluminum-doped zinc oxide (ZAO),wherein the forming of the passivation layer pattern comprises;

    forming a passivation layer on the gate wiring line and the data wiring line;

    forming a photoresist pattern on the passivation layer to remove the passivation layer from the drain electrode and the pixel region, the photoresist pattern including a first region and a second region, the first region formed on the gate wiring line and the data wiring line with the exception of a part of the drain electrode, and the second region formed between an end of the drain electrode and the pixel region, the second region being thinner than the first region; and

    overetching the passivation layer using the photoresist pattern as an etching mask.

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