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Multi-metal-oxide high-K gate dielectrics

  • US 7,824,990 B2
  • Filed: 01/10/2006
  • Issued: 11/02/2010
  • Est. Priority Date: 12/05/2005
  • Status: Expired due to Fees
First Claim
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1. A method of forming a high-k dielectric layer on a substrate, the method comprising:

  • forming a first dielectric layer over the substrate;

    forming a substantially nitrogen free metal layer over the first dielectric layer;

    forming a second dielectric layer over the metal layer; and

    annealing the substrate in an oxidizing ambient until the first dielectric layer, the metal layer, and the second dielectric layer combine to form a homogenous high-k dielectric layer.

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