Method of fabricating light emitting device and thus-fabricated light emitting device

• US 7,825,008 B2
• Filed: 03/02/2007
• Issued: 11/02/2010
• Est. Priority Date: 03/07/2006
• Status: Expired due to Fees

• Current Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Original Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Inventors: Ikeda, Hitoshi, Nakamura, Akio
• Primary Examiner(s): Loke; Steven
• Assistant Examiner(s): GOODWIN, DAVID J
• Application Number:
  US11/712,940
• Publication Number:
  US 20070210327A1
• Time in Patent Office: 1,341 Days
• Field of Search: 438/745, 438/460, 438/462, 438/464, 438/800, 257/79, 257/98, 257/100, 257/466, 257/436, 257/447, 257/460
• US Class Current: 438/460
• CPC Class Codes: H01L 21/02395 Arsenides
• CPC Class Codes: H01L 21/02461 Phosphides
• CPC Class Codes: H01L 21/02463 Arsenides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02543 Phosphides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Aiming at providing a method of fabricating a light emitting device having an AlGaInP light emitting section, less causative of crack by cleavage, on the edge portions on the back surface of the device chip in process of dicing or breaking, a light emitting device wafer is diced along a dicing line inclined at an angle of 15° to 30°, both ends inclusive, away from a dicing line angle reference direction defined as the <110> direction on the (100) main surface.

Claims

1. A method of fabricating a light emitting device to obtain square-shaped light emitting device chips, the method comprising:

dicing a light emitting device wafer along a dicing line inclined at an angle of 21°

to 24°

, both ends inclusive, away from a dicing line angle reference direction defined as the <

110>

direction on the (100) surface, to thereby obtain the square-shaped light emitting device chips,

the light emitting device wafer having a light emitting layer section composed of a compound semiconductor having a composition expressed by formula (Al_xGa_1-x)_yIn_1-yP (where, 0≦

x≦

1, 0≦

y≦

1), the compound semiconductor capable of lattice matching with GaAs, and the light emitting device wafer having a (100) surface on a main surface thereof; and

a device substrate portion stacked on the light emitting layer section and having a crystal orientation aligned with that of the light emitting layer section, and the device substrate portion composed of a III-V compound semiconductor.

2. The method of fabricating a light emitting device as claimed in claim 1, wherein the light emitting device chips are obtained by half-dicing the light emitting device wafer halfway along a thickness-wise direction thereof, from a side along the main surface, to thereby form half-dicing grooves, and then breaking the half-diced light emitting device wafer along each of the half-dicing grooves.

3. The method of fabricating a light emitting device as claimed in claim 1, wherein the device substrate portion is a GaAs single crystal substrate.

4. The method of fabricating a light emitting device as claimed in claim 1, wherein the device substrate portion is a GaP single crystal substrate.

5. The method of fabricating a light emitting device as claimed in claim 1, wherein the dicing line is set at an angle of 22.5°

away from the dicing line angle reference direction.