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Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen

  • US 7,825,038 B2
  • Filed: 05/29/2007
  • Issued: 11/02/2010
  • Est. Priority Date: 05/30/2006
  • Status: Active Grant
First Claim
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1. A method of depositing a silicon oxide layer on a substrate, the method comprising:

  • providing a substrate to a deposition chamber;

    generating atomic oxygen outside the deposition chamber, and introducing the atomic oxygen into the chamber;

    introducing a silicon precursor to the deposition chamber, wherein the silicon precursor and the atomic oxygen are first mixed in the chamber;

    reacting the silicon precursor and the atomic oxygen to form the silicon oxide layer on the substrate wherein the substrate is maintained at a temperature between about 0°

    C. and about 150°

    C. as the silicon oxide layer is formed, wherein the silicon oxide layer is initially-flowable following deposition; and

    annealing the deposited silicon oxide layer.

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