Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
First Claim
1. A method of depositing a silicon oxide layer on a substrate, the method comprising:
- providing a substrate to a deposition chamber;
generating atomic oxygen outside the deposition chamber, and introducing the atomic oxygen into the chamber;
introducing a silicon precursor to the deposition chamber, wherein the silicon precursor and the atomic oxygen are first mixed in the chamber;
reacting the silicon precursor and the atomic oxygen to form the silicon oxide layer on the substrate wherein the substrate is maintained at a temperature between about 0°
C. and about 150°
C. as the silicon oxide layer is formed, wherein the silicon oxide layer is initially-flowable following deposition; and
annealing the deposited silicon oxide layer.
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Abstract
Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
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Citations
22 Claims
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1. A method of depositing a silicon oxide layer on a substrate, the method comprising:
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providing a substrate to a deposition chamber; generating atomic oxygen outside the deposition chamber, and introducing the atomic oxygen into the chamber; introducing a silicon precursor to the deposition chamber, wherein the silicon precursor and the atomic oxygen are first mixed in the chamber; reacting the silicon precursor and the atomic oxygen to form the silicon oxide layer on the substrate wherein the substrate is maintained at a temperature between about 0°
C. and about 150°
C. as the silicon oxide layer is formed, wherein the silicon oxide layer is initially-flowable following deposition; andannealing the deposited silicon oxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of forming a silicon oxide layer on a substrate, the method comprising:
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providing a silicon wafer substrate to a reaction chamber; generating atomic oxygen from a dissociation of molecular oxygen in a high-density argon plasma, wherein the atomic oxygen is generated in a remote plasma generating chamber that is external to the reaction chamber; mixing the atomic oxygen with a silicon precursor in the reaction chamber, wherein the atomic oxygen and the silicon precursor are not mixed before reaching the reaction chamber; and depositing the silicon oxide layer on the substrate, wherein the silicon oxide layer comprises reaction products from the reaction of the atomic oxygen with the silicon precursor and the substrate is maintained at a temperature between about 0°
C. and about 150°
C. as the silicon oxide layer is deposited, wherein the silicon oxide layer is initially-flowable following deposition. - View Dependent Claims (20, 21, 22)
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Specification