Method for depositing flowable material using alkoxysilane or aminosilane precursor

• US 7,825,040 B1
• Filed: 06/22/2009
• Issued: 11/02/2010
• Est. Priority Date: 06/22/2009
• Status: Active Grant

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Tazawa, Hisashi, Ueda, Shintaro, Ha, Jeongseok, Fukazawa, Atsuki
• Primary Examiner(s): Garber; Charles D
• Assistant Examiner(s): Lee; Cheung
• Application Number:
  US12/489,252
• Time in Patent Office: 498 Days
• Field of Search: 438/764, 257/E21.191, 257/E21.555
• US Class Current: 438/778
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence

Abstract

A method of filling a recess with an insulation film includes: introducing an alkoxysilane or aminosilane precursor containing neither a Si—C bond nor a C—C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; and depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at −50° C. to 100° C.

Claims

1. A method of filling a recess with an insulation film, comprising:

introducing an alkoxysilane or aminosilane precursor containing neither a Si—

C bond nor a C—

C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed, wherein no carbon-containing gas other than the precursor is introduced into the reaction chamber, and no pre-treatment for promoting flowability of the precursor on the substrate is conducted prior to the introduction of the precursor into the reaction chamber; and

depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at −

50°

C. to 100°

C.

2. The method according to claim 1, wherein the alkoxysilane or aminosilane precursor is an alkoxysilane compound having O—

Si—

O bonds.

3. The method according to claim 2, wherein the alkoxysilane compound is at least one of the following:

4. The method according to claim 1, wherein the alkoxysilane or aminosilane precursor is an aminosilane compound having N—

Si—

N bonds.

5. The method according to claim 1, wherein when introducing the alkoxysilane or aminosilane precursor into the reaction chamber, an oxygen-supplying gas is introduced at a flow rate less than a flow rate of the alkoxysilane or aminosilane precursor into the reaction chamber.

6. The method according to claim 1, wherein when introducing the alkoxysilane or aminosilane precursor into the reaction chamber, no oxygen-supplying gas is introduced into the reaction chamber.

7. The method according to claim 1, wherein when introducing the alkoxysilane or aminosilane precursor into the reaction chamber, an inert gas and/or a nitrogen-containing gas is introduced into the reaction chamber.

8. The method according to claim 1, wherein the irregular surface of the substrate is constituted by a resist or barrier metal.

9. The method according to claim 8, further comprising plasma- or thermal-treating the irregular surface with an inert gas and/or a nitrogen-containing gas without an oxygen-containing gas before introducing the alkoxysilane or aminosilane precursor into the reaction chamber.

10. The method according to claim 1, wherein the irregular surface of the substrate is constituted by a shallow trench isolation (STI) structure or pre-metal dielectric (PMD) layer.

11. The method according to claim 10, further comprising plasma- or thermal-treating the irregular surface with an inert gas, a nitrogen-containing gas, and/or an oxygen-containing gas before introducing the alkoxysilane or aminosilane precursor into the reaction chamber.

12. The method according to claim 1, further comprising treating the flowable Si-containing insulation film deposited on the irregular surface using heat, UV irradiation, or electron-beam irradiation in an atmosphere of an inert gas or an oxidizing gas, thereby converting the flowable Si-containing insulation film into an silicon oxide film.

13. The method according to claim 1, wherein substantially no Si—

C bond is formed in the depositing film.

14. A method of filling a recess with an insulation film, comprising:

introducing an alkoxysilane or aminosilane precursor containing neither a Si—

C bond nor a C—

C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; and

depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at −

50°

C. to 100°

C.,

wherein the alkoxysilane or aminosilane precursor is an aminosilane compound having N—

Si—

N bonds, wherein the aminosilane compound is at least one of the following;