Semiconductor device and method of manufacturing semiconductor device

• US 7,825,423 B2
• Filed: 02/01/2007
• Issued: 11/02/2010
• Est. Priority Date: 02/02/2006
• Status: Expired due to Fees

• Current Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Original Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Inventors: Shiraishi, Akinori, Sunohara, Masahiro, Murayama, Kei, Koizumi, Naoyuki, Higashi, Mitsutoshi, Taguchi, Yuichi, Sakaguchi, Hideaki
• Primary Examiner(s): Parker; Kenneth A
• Assistant Examiner(s): NGUYEN, JOSEPH H
• Application Number:
  US11/700,761
• Publication Number:
  US 20070194712A1
• Time in Patent Office: 1,370 Days
• Field of Search: 257 98-100, 257/E33.056, 257/E33.058, 257/E33.059, 257/E33.067, 257/E33.072, 257/E33.073, 438/22, 313498-500, 313/512
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

In a semiconductor device 100, a light emitting device 102 is mounted on a substrate 101. A light reflection preventing film 130 for preventing a reflection of a light is formed on an upper surface of the light emitting device 102. Moreover, a plate-shaped cover 103 formed of a glass having a light transparency is disposed above the light emitting device 102, and a light reflection preventing film 140 for preventing a reflection of a light is also formed on an upper surface of the cover 103.

Claims

1. A semiconductor device comprising:

a silicon substrate;

an optical functional device mounted on the silicon substrate;

a cover having a light transparency and being disposed above the optical functional device;

a light reflection preventing film made of stacked dielectrics, which prevents a reflection of a light, formed on an upper surface of the cover; and

a phosphor film formed on a lower surface of the cover,

wherein there is a space between an upper surface of the optical functional device and the phosphor film formed on the lower surface of the cover, and

wherein there is no light reflection preventing film formed on the upper surface of the optical functional device.

2. The semiconductor device according to claim 1, wherein the cover has the light reflection preventing film formed on at least one of a front surface or a back surface.

3. The semiconductor device according to claim 1, wherein the light reflection preventing film is a transparent film formed by coating a dielectric film.

4. The semiconductor device according to claim 1, wherein the optical functional device is a light emitting device for emitting a light, the semiconductor device further comprising:

a reflector, which reflects a light, disposed to surround a side surface of the light emitting device.

5. The semiconductor device according to claim 4, wherein the optical functional device is mounted in a concave portion of the silicon substrate and the concave portion is sealed by bonding the cover to the silicon substrate.

6. The semiconductor device according to claim 1,

wherein the cover is a hemispherical cover bonded to the silicon substrate, and

wherein the light reflection preventing film is formed on an outer peripheral surface of the cover, the semiconductor device further comprising:

a phosphor film formed on an inner peripheral surface of the cover.

7. A method of manufacturing a semiconductor device comprising the steps of:

mounting an optical functional device on a silicon substrate;

sealing the optical functional device disposed on the silicon substrate by using a cover having a light transparency;

forming a light reflection preventing film on an upper surface of the cover, wherein the light reflection preventing film is made of stacked dielectrics; and

forming a phosphor film on a lower surface of the cover,

wherein there is a space between an upper surface of the optical functional device and the phosphor film formed on the lower surface of the cover, and

wherein there is no light reflection preventing film formed on the upper surface of the optical functional device.

8. The method of manufacturing a semiconductor device according to claim 7, wherein the light reflection preventing film is a transparent film formed by coating a dielectric film.

9. The method of manufacturing a semiconductor device according to claim 7, further comprising a step of:

forming the silicon substrate having a concave portion on which the optical functional device is mounted and an opening of the concave portion which is sealed with the cover.

10. The method of manufacturing a semiconductor device according to claim 7, wherein the optical functional device is a light emitting device for emitting a light,

the method further comprising a step of:

disposing a reflector for reflecting a light to surround a side surface of the light emitting device.

11. The method of manufacturing a semiconductor device according to claim 10, further comprising steps of:

bonding an upper end of the reflector to the cover; and

bonding a lower end of the reflector around a region, on which the optical functional device is mounted, of the silicon substrate, thereby sealing a space in which the optical functional device is mounted.

12. The method of making a semiconductor device according to claim 7,

wherein the cover is a hemispherical cover bonded to the silicon substrate, and

wherein the light reflection preventing film is formed on an outer peripheral surface of the cover,

the method further comprising a step of:

forming a phosphor film on an inner peripheral surface of the cover.