Semiconductor component having a drift zone and a drift control zone

• US 7,825,467 B2
• Filed: 09/30/2008
• Issued: 11/02/2010
• Est. Priority Date: 09/30/2008
• Status: Expired due to Fees

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Hirler, Franz, Mauder, Anton, Willmeroth, Armin
• Primary Examiner(s): Soward; Ida M
• Application Number:
  US12/241,808
• Publication Number:
  US 20100078694A1
• Time in Patent Office: 763 Days
• Field of Search: 257/328, 257339-341, 257/367, 257/401, 257/409, 257/E29.013, 257/E29.029, 257/E29.256, 257/E29.325, 257/E29.327
• US Class Current: 257/341
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/42356 Disposition, e.g. buried gate electrode H01L29/42324 and H01L29/4234 take precedence
• CPC Class Codes: H01L 29/4916 the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/7828 without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
• CPC Class Codes: H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
• CPC Class Codes: H03K 2017/6875 using self-conductive, depletion FETs
• CPC Class Codes: H03K 2217/0036 Means reducing energy consumption

Abstract

A description is given of a normally on semiconductor component having a drift zone, a drift control zone and a drift control zone dielectric arranged between the drift zone and the drift control zone.

Claims

1. A semiconductor component, comprising:

a source zone and a drain zone of a first conduction type and a drift zone of the first conduction type, the drift zone being arranged between the source zone and the drain zone and being doped more weakly than the source zone and the drain zone;

a drift control zone extending adjacent to the drift zone along the drift zone and having a source-side end and a drain-side end, wherein the source-side end is connected to a drift control zone terminal;

a drift control zone dielectric arranged between the drift control zone and the drift zone;

a rectifier arrangement connected between the drift control zone and the drain zone.

2. The semiconductor component of claim 1, wherein the semiconductor component is normally on.

3. The semiconductor component of claim 1, wherein the drift zone and the drift control zone comprise a monocrystalline semiconductor material or an at least approximately monocrystalline semiconductor material.

4. The semiconductor component of claim 1, wherein a connection zone of a second conduction type, which is complementary to the first conduction type, is arranged between the drift control zone terminal and the drift control zone.

5. The semiconductor component of claim 4, wherein the connection zone and the drift zone mutually overlap across the drift control zone dielectric.

6. The semiconductor component of claim 1, further comprising a capacitance connected between the drift control zone and a capacitance terminal.

7. The semiconductor component of claim 4, further comprising a capacitance comprising:

a first electrode formed by the connection zone;

a second electrode formed by a doped semiconductor zone; and

a capacitance dielectric arranged between the connection zone and the doped semiconductor zone.

8. The semiconductor component of claim 7, wherein the second electrode is arranged adjacent to the drift control zone and is also dielectrically insulated from the drift control zone by using the capacitance dielectric.

9. The semiconductor component of claim 8, wherein the second electrode comprises a polycrystalline semiconductor material, a metal or a metal-semiconductor compound.

10. The semiconductor component of claim 1, including a source terminal connected to the source zone.

11. The semiconductor component of claim 10, wherein a source connection zone comprising a polycrystalline semiconductor material, a metal or a metal-semiconductor compound is arranged between the source terminal and the source zone.

12. The semiconductor component of claim 4, wherein a further connection zone comprising a polycrystalline semiconductor material, a metal or a metal-semiconductor compound is arranged between the connection zone and the drift control zone terminal.

13. The semiconductor component of claim 1, wherein the rectifier element is connected to a connection zone of the drift control zone in the region of the drain-side end.

14. The semiconductor component of claim 1, wherein the drift control zone has a lateral end, and wherein the rectifier element is connected to a connection zone of the drift control zone at the lateral end in the region of the source-side end.

15. A semiconductor component arrangement having a normally on semiconductor component, comprising:

a source zone and a drain zone of a first conduction type and a drift zone of the first conduction type, the drift zone being arranged between the source zone and the drain zone and being doped more weakly than the source zone and the drain zone;

a drift control zone, which extends adjacent to the drift zone along the drift zone and which has a source-side end and a drain-side end, wherein the source-side end is connected to a drift control zone terminal;

a drift control zone dielectric arranged between the drift control zone and the drift zone;

a rectifier arrangement, which is connected between the drift control zone and the drain zone, and having

a normally off transistor component, comprising a drive terminal and a load path, the load path of which is connected in series with the drift zone of the normally on semiconductor component and the drive terminal of which is coupled to the drift control zone terminal of the normally on semiconductor component.

16. The semiconductor component arrangement of claim 15, wherein the drive terminal of the normally off semiconductor component is coupled to the drift control zone terminal of the normally on semiconductor component via a rectifier element.

17. The semiconductor component arrangement of claim 15, wherein a capacitance is connected between the drift control zone terminal and a first terminal of the load path of the normally off semiconductor component, wherein a second terminal of the normally off semiconductor component is connected to the drift zone of the normally on component and the load path runs between the first and second terminals.

18. The semiconductor component arrangement of claim 15, wherein the normally on semiconductor component and the normally off semiconductor component are integrated in a common semiconductor body.

19. The semiconductor component arrangement as claimed in claim 17, wherein the normally on semiconductor component, the normally off semiconductor component and the capacitance are integrated in a common semiconductor body.

20. The semiconductor component arrangement of claim 17, wherein the normally on semiconductor component, the normally off semiconductor component, the rectifier element and the capacitance are integrated in a common semiconductor body.