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Semiconductor component having a drift zone and a drift control zone

  • US 7,825,467 B2
  • Filed: 09/30/2008
  • Issued: 11/02/2010
  • Est. Priority Date: 09/30/2008
  • Status: Expired due to Fees
First Claim
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1. A semiconductor component, comprising:

  • a source zone and a drain zone of a first conduction type and a drift zone of the first conduction type, the drift zone being arranged between the source zone and the drain zone and being doped more weakly than the source zone and the drain zone;

    a drift control zone extending adjacent to the drift zone along the drift zone and having a source-side end and a drain-side end, wherein the source-side end is connected to a drift control zone terminal;

    a drift control zone dielectric arranged between the drift control zone and the drift zone;

    a rectifier arrangement connected between the drift control zone and the drain zone.

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