Semiconductor component having a drift zone and a drift control zone
First Claim
Patent Images
1. A semiconductor component, comprising:
- a source zone and a drain zone of a first conduction type and a drift zone of the first conduction type, the drift zone being arranged between the source zone and the drain zone and being doped more weakly than the source zone and the drain zone;
a drift control zone extending adjacent to the drift zone along the drift zone and having a source-side end and a drain-side end, wherein the source-side end is connected to a drift control zone terminal;
a drift control zone dielectric arranged between the drift control zone and the drift zone;
a rectifier arrangement connected between the drift control zone and the drain zone.
2 Assignments
0 Petitions
Accused Products
Abstract
A description is given of a normally on semiconductor component having a drift zone, a drift control zone and a drift control zone dielectric arranged between the drift zone and the drift control zone.
-
Citations
20 Claims
-
1. A semiconductor component, comprising:
-
a source zone and a drain zone of a first conduction type and a drift zone of the first conduction type, the drift zone being arranged between the source zone and the drain zone and being doped more weakly than the source zone and the drain zone; a drift control zone extending adjacent to the drift zone along the drift zone and having a source-side end and a drain-side end, wherein the source-side end is connected to a drift control zone terminal; a drift control zone dielectric arranged between the drift control zone and the drift zone; a rectifier arrangement connected between the drift control zone and the drain zone. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A semiconductor component arrangement having a normally on semiconductor component, comprising:
-
a source zone and a drain zone of a first conduction type and a drift zone of the first conduction type, the drift zone being arranged between the source zone and the drain zone and being doped more weakly than the source zone and the drain zone; a drift control zone, which extends adjacent to the drift zone along the drift zone and which has a source-side end and a drain-side end, wherein the source-side end is connected to a drift control zone terminal; a drift control zone dielectric arranged between the drift control zone and the drift zone; a rectifier arrangement, which is connected between the drift control zone and the drain zone, and having a normally off transistor component, comprising a drive terminal and a load path, the load path of which is connected in series with the drift zone of the normally on semiconductor component and the drive terminal of which is coupled to the drift control zone terminal of the normally on semiconductor component. - View Dependent Claims (16, 17, 18, 19, 20)
-
Specification