Micromachined microphone and multisensor and method for producing same

• US 7,825,484 B2
• Filed: 04/25/2005
• Issued: 11/02/2010
• Est. Priority Date: 04/25/2005
• Status: Active Grant

• Current Assignee: Invensense Incorporated (TDK Corporation)
• Original Assignee: Analog Devices, Inc.
• Inventors: Weigold, Jason, Nunan, Thomas Kieran, Zhang, Xin, Brosnihan, Timothy J., Martin, John R., Core, Craig
• Primary Examiner(s): Nguyen; Cuong Q
• Assistant Examiner(s): Lam; Cathy N
• Application Number:
  US11/113,925
• Publication Number:
  US 20060237806A1
• Time in Patent Office: 2,017 Days
• Field of Search: 257/415, 257/704, 257/419, 257/680, 257/E21.235, 257/E31.032, 381/423, 381/191, 381/175, 381/355
• US Class Current: 257/415
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81C 1/00182 Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/49109 outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/15151 the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
• CPC Class Codes: H04R 19/005 using semiconductor materials
• CPC Class Codes: H04R 2499/11 Transducers incorporated or for use in hand-held devices, e.g. mobile phones, PDA's, camera's
• CPC Class Codes: H04R 3/00 Circuits for transducers , loudspeakers or microphones

Abstract

A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.

Claims

1. Apparatus comprising:

a wafer having at least a first silicon layer, the wafer including a plurality of trenches formed through the first silicon layer;

a first oxide layer on a front side of the first silicon layer and lining the trenches;

a sacrificial polysilicon layer on the first oxide layer;

a second oxide layer on the sacrificial polysilicon layer; and

a plurality of polysilicon microphone structures, including a diaphragm, on the second oxide layer, wherein the sacrificial polysilicon layer includes an opening at a future pedestal site underlying at least a portion of the diaphragm, and wherein the first oxide layer, the sacrificial polysilicon layer and the second oxide layer are substantially vertically between the substrate and the diaphragm.

2. Apparatus according to claim 1, further comprising:

a plurality of polysilicon inertial sensor structures above the front side of the first silicon layer.

3. Apparatus according to claim 1, wherein the wafer further includes a second silicon layer and an intermediate oxide layer between a back side of the first silicon layer and the second silicon layer, and wherein underlying portions of the second silicon layer and the intermediate oxide layer are removed to form a back side cavity exposing the trenches.

4. Apparatus according to claim 3, wherein the trenches are formed through the first silicon layer through the back side cavity.

5. Apparatus according to claim 1, wherein the plurality of trenches allow sound waves to reach the diaphragm from the back side of the first silicon layer.

6. Apparatus according to claim 1, wherein the diaphragm is supported on patterned springs.

7. Apparatus according to claim 1, wherein the wafer comprises an SOI wafer.

8. Apparatus according to claim 7, further comprising an inertial sensor on the same die.

9. Apparatus according to claim 1, wherein the opening exposes a portion of the first oxide layer at the future pedestal site, and wherein the second oxide layer covers the exposed portion of the first oxide layer through the opening at the future pedestal site.

10. Apparatus according to claim 1, further comprising a cavity through the first and second oxide layers at the future pedestal site.

11. Apparatus according to claim 10, further comprising a resist material within the cavity to form a resist pedestal that supports at least a portion of the diaphragm.