Semiconductor acceleration sensor

• US 7,827,865 B2
• Filed: 03/29/2006
• Issued: 11/09/2010
• Est. Priority Date: 03/30/2005
• Status: Expired due to Fees

• Current Assignee: Yokohama Rubber Company Limited
• Original Assignee: Yokohama Rubber Company Limited
• Inventors: Hatano, Yasuo, Hattori, Yutaka
• Primary Examiner(s): Kwok; Helen C.
• Application Number:
  US11/815,556
• Publication Number:
  US 20080271535A1
• Time in Patent Office: 1,686 Days
• Field of Search: 735/143.3, 735/143.4, 735/143.8, 338/2, 338/5
• US Class Current: 73/514.33
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 15/18 in two or more dimensions
• CPC Class Codes: G01P 2015/084 the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass

Abstract

The present invention is to provide a semiconductor acceleration sensor capable of sensing accelerations in two directions parallel to the surface of a diaphragm and orthogonal to each other with respective proper sensitivities. A semiconductor acceleration sensor is constituted of diaphragm pieces extending from the center of the diaphragm surface to a wafer outer-circumferential frame section, respectively, along an X axis direction and a Y axis direction orthogonal to each other. On the upper surface of the diaphragm pieces, there are formed piezo resistors Rx1 to Rx4, Ry1 to Ry4, Rz1 to Rz4. In the diaphragm pieces disposed on a single line along the X axis direction and the diaphragm pieces disposed on a single line along the Y axis direction, the areas of cross section orthogonal to the axis are set according to a maximum value of acceleration, respectively, in the X axis direction or Y axis direction.

Claims

1. A semiconductor acceleration sensor, comprising:

a silicon wafer having a cross-shaped diaphragm formed within a wafer outer-circumferential frame section;

a pedestal securing the wafer outer-circumferential frame section;

one plumb bob disposed in a center of one surface of the diaphragm; and

a plurality of beams extending, respectively, from the center of the surface of the diaphragm to the wafer outer-circumferential frame section along X axis and Y axis directions parallel to the surface of the diaphragm and orthogonal to each other,

wherein the thickness of the beam along the X axis direction is different from the thickness of the beam along the Y axis direction, the thicknesses of each of beams are set according to maximum values of respective accelerations in the X axis and Y axis directions.

2. The semiconductor acceleration sensor according to claim 1, wherein in each of the beam disposed along the X axis direction and the beam disposed along the Y axis direction, the thicknesses at two points symmetrical around the center is identical.

3. The semiconductor acceleration sensor according to claim 1, wherein in the either one at least in the beam disposed along the X axis direction and the beam disposed along the Y axis direction, the thicknesses increases in a direction from the center to the wafer outer-circumferential frame section.

4. The semiconductor acceleration sensor according to claim 1, wherein to allow sensing of respective accelerations in the X axis and Y axis directions and a Z axis direction orthogonal to the surface of the diaphragm, a diffused resistor is arranged in each of the plurality of beams and at the same time, on the wafer outer-circumferential frame section corresponding to each of the plurality of beams, there is provided an connection electrode connected to the diffused resistor.

5. The semiconductor acceleration sensor according to claim 1, wherein the diaphragm is a silicon piezo diaphragm.

6. The semiconductor acceleration sensor according to claim 1, wherein in at least one in one surface side and the other surface side of the diaphragm, there is provided a protrusion secured to a position spaced with a predetermined gap from at least one in the surface of the center of the diaphragm and from a surface of the plumb bob corresponding to a center, and protruding opposite the center.

7. The semiconductor acceleration sensor according to claim 6, wherein the protrusion is secured and supported to at least one in the wafer outer-circumferential frame section and the pedestal and disposed at a position spaced with a predetermined gap from the center of the other surface of the diaphragm so as to protrude opposite the center of the other surface of the diaphragm.

8. The semiconductor acceleration sensor according to claim 6, wherein that the protrusion is joined and supported to at least one in the wafer outer-circumferential frame section and the pedestal and disposed at a position spaced with a predetermined gap from the center of the plumb bob so as to protrude opposite the surface of the plumb bob.

9. The semiconductor acceleration sensor according to claim 6, wherein a tip end of the protrusion corresponding to at least one in the surface of the center of the diaphragm and to the surface of the plumb bob corresponding to the center has a cone-shaped tip end configuration.