Efficient carrier injection in a semiconductor device
First Claim
1. A semiconductor device with efficient carrier injection from a wide bandgap semiconductor material into a narrower bandgap semiconductor material, the semiconductor device comprising:
- a first semiconductor material having a desired bandgap;
an injection structure adjacent the first semiconductor material, the injection structure comprising;
a confining region formed from a second semiconductor material having a wider bandgap than the first semiconductor material; and
a transition region positioned between the first and second semiconductor materials, the transition region comprising a first ramp portion in which a composition is gradually ramped and a doped intermediate structure, the doped intermediate structure having an inflection in the ramping of the composition wherein (i) the intermediate structure is n-doped and the electron affinity at the inflection is lower than the electron affinity of the confining region or (ii) the intermediate structure is p-doped and the hole affinity at the inflection is higher than the hole affinity of the confining region, wherein the ramping of the composition comprises a change in the content of Al, P, or Si and the change in content of the Al, P, or Si provides an electron affinity minimum or a hole affinity maximum within the ramping and the inflection occurs at an Al, P, or Si content that is within 20% of the electron affinity minimum or the hole affinity maximum.
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Accused Products
Abstract
Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.
151 Citations
18 Claims
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1. A semiconductor device with efficient carrier injection from a wide bandgap semiconductor material into a narrower bandgap semiconductor material, the semiconductor device comprising:
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a first semiconductor material having a desired bandgap; an injection structure adjacent the first semiconductor material, the injection structure comprising; a confining region formed from a second semiconductor material having a wider bandgap than the first semiconductor material; and a transition region positioned between the first and second semiconductor materials, the transition region comprising a first ramp portion in which a composition is gradually ramped and a doped intermediate structure, the doped intermediate structure having an inflection in the ramping of the composition wherein (i) the intermediate structure is n-doped and the electron affinity at the inflection is lower than the electron affinity of the confining region or (ii) the intermediate structure is p-doped and the hole affinity at the inflection is higher than the hole affinity of the confining region, wherein the ramping of the composition comprises a change in the content of Al, P, or Si and the change in content of the Al, P, or Si provides an electron affinity minimum or a hole affinity maximum within the ramping and the inflection occurs at an Al, P, or Si content that is within 20% of the electron affinity minimum or the hole affinity maximum. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device with efficient carrier injection from a wide bandgap semiconductor material into a narrower bandgap semiconductor material, the semiconductor device comprising:
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a first semiconductor material having a desired bandgap; an injection structure adjacent the first semiconductor material, the injection structure comprising; a confining region formed from a second semiconductor material having a wider bandgap than the first semiconductor material; and a transition region positioned between the first and second semiconductor materials, the transition region comprising a first ramp portion in which a composition is gradually ramped and a doped intermediate structure, the doped intermediate structure having an inflection in the ramping of the composition wherein (i) the intermediate structure is n-doped and the electron affinity at the inflection is lower than the electron affinity of the confining region or (ii) the intermediate structure is p-doped and the hole affinity at the inflection is higher than the hole affinity of the confining region, wherein the inflection occurs at an aluminum content that is within 15% of the electron affinity minimum or the hole affinity maximum.
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18. A semiconductor device with efficient carrier injection from a wide bandgap semiconductor material into a narrower bandgap semiconductor material, the semiconductor device comprising:
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a first semiconductor material having a desired bandgap; an injection structure adjacent the first semiconductor material, the injection structure comprising; a confining region formed from a second semiconductor material having a wider bandgap than the first semiconductor material; and a transition region positioned between the first and second semiconductor materials, the transition region comprising a first ramp portion in which a composition is gradually ramped and a doped intermediate structure, the doped intermediate structure having an inflection in the ramping of the composition wherein (i) the intermediate structure is n-doped and the electron affinity at the inflection is lower than the electron affinity of the confining region or (ii) the intermediate structure is p-doped and the hole affinity at the inflection is higher than the hole affinity of the confining region, wherein the confining region comprises a second ramp portion in which the composition is ramped and wherein the doped intermediate structure having the inflection is between the first and second ramp portions.
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Specification