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High-voltage vertical transistor with a multi-layered extended drain structure

  • US 7,829,944 B2
  • Filed: 08/30/2004
  • Issued: 11/09/2010
  • Est. Priority Date: 09/07/2001
  • Status: Expired due to Fees
First Claim
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1. A vertical high-voltage transistor comprising:

  • a substrate of a first conductivity type;

    a pair of first trenches in the substrate that define a mesa;

    a field plate disposed in each first trench of the pair of first trenches, the field plate being separated from the mesa by a dielectric layer;

    a second trench in the dielectric layer;

    an insulated gate disposed in the second trench between the mesa and the field plate member.

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