Multichip semiconductor device, chip therefor and method of formation thereof
First Claim
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1. A chip for use in a multichip semiconductor device comprising:
- a semiconductor substrate having a surface on which circuit components are formed;
a first interlayer insulating film formed above the surface of the semiconductor substrate;
a connect plug made of a metal and formed in a through hole that passes through the first interlayer insulating film and the semiconductor substrate;
a second interlayer insulating film formed on the first interlayer insulating film; and
a metal interconnection which passes through the second interlayer insulating film and which connects to a portion of the connect plug, an area of the portion being smaller than a cross-sectional area of the connect plug,wherein the connect plug includes a metal plug formed in the through hole and having a cavity, an insulating film formed between the metal plug and a sidewall of the through hole, and a film formed in the cavity, the film being smaller than the metal plug in a difference in thermal expansion coefficient from the semiconductor substrate.
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Abstract
A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
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Citations
5 Claims
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1. A chip for use in a multichip semiconductor device comprising:
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a semiconductor substrate having a surface on which circuit components are formed; a first interlayer insulating film formed above the surface of the semiconductor substrate; a connect plug made of a metal and formed in a through hole that passes through the first interlayer insulating film and the semiconductor substrate; a second interlayer insulating film formed on the first interlayer insulating film; and a metal interconnection which passes through the second interlayer insulating film and which connects to a portion of the connect plug, an area of the portion being smaller than a cross-sectional area of the connect plug, wherein the connect plug includes a metal plug formed in the through hole and having a cavity, an insulating film formed between the metal plug and a sidewall of the through hole, and a film formed in the cavity, the film being smaller than the metal plug in a difference in thermal expansion coefficient from the semiconductor substrate. - View Dependent Claims (2, 4)
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3. A chip for use in a multichip semiconductor device comprising:
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a semiconductor substrate having a surface on which circuit components are formed; a first interlayer insulating film formed above the surface of the semiconductor substrate; and a connect plug made of a metal and formed in a through hole that passes through the first interlayer insulating film and the semiconductor substrate; a second interlayer insulating film formed on the first interlayer insulating film; and a metal interconnection which passes through the second interlayer insulating film and which connects to a portion of the connect plug, an area of the portion being smaller than a cross-sectional area of the connect plug, wherein the connect plug includes a metal plug formed in the through hole so that a space is left in the through hole on a rear side of the semiconductor substrate, and an insulating film formed between the metal plug and a sidewall of the through hole, and a connect member to be electrically connected to another chip is formed in the space in the through hole. - View Dependent Claims (5)
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Specification