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Multichip semiconductor device, chip therefor and method of formation thereof

  • US 7,829,975 B2
  • Filed: 10/31/2007
  • Issued: 11/09/2010
  • Est. Priority Date: 12/02/1996
  • Status: Expired due to Fees
First Claim
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1. A chip for use in a multichip semiconductor device comprising:

  • a semiconductor substrate having a surface on which circuit components are formed;

    a first interlayer insulating film formed above the surface of the semiconductor substrate;

    a connect plug made of a metal and formed in a through hole that passes through the first interlayer insulating film and the semiconductor substrate;

    a second interlayer insulating film formed on the first interlayer insulating film; and

    a metal interconnection which passes through the second interlayer insulating film and which connects to a portion of the connect plug, an area of the portion being smaller than a cross-sectional area of the connect plug,wherein the connect plug includes a metal plug formed in the through hole and having a cavity, an insulating film formed between the metal plug and a sidewall of the through hole, and a film formed in the cavity, the film being smaller than the metal plug in a difference in thermal expansion coefficient from the semiconductor substrate.

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