Closed loop CESL high performance CMOS device

• US 7,829,978 B2
• Filed: 06/29/2005
• Issued: 11/09/2010
• Est. Priority Date: 06/29/2005
• Status: Expired due to Fees

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chen, Shang-Chih, Huang, Shih-Hsieng, Wang, Chih-Hao
• Primary Examiner(s): Warren; Matthew E
• Application Number:
  US11/170,201
• Publication Number:
  US 20070001217A1
• Time in Patent Office: 1,959 Days
• Field of Search: 257/635, 257/649, 257/900, 257/E29.132, 257/E29.162, 257/E29.165
• US Class Current: 257/635
• CPC Class Codes: H01L 21/823807 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 21/823864 with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/7843 the means being an applied insulating layer
• CPC Class Codes: Y10S 257/90 MOSFET type gate sidewall insulating spacer

Abstract

An N-MOS and/or P-MOS device having enhanced performance such as an FET suitable for use in a CMOS circuit. The device comprises both an “L-like” shaped layer or spacer on the side walls of a gate structure as well as a CESL (contact-etch stop layer) that covers the gate structure and surrounding substrate to induce increase tensile stresses in the N-MOS device and increased compressive stresses in the P-MOS device.

Claims

1. A semiconductor device comprising:

a substrate with a recess formed in a source/drain region of said substrate;

at least one gate structure on said substrate, the gate structure comprising a gate electrode;

at least one “

L-like”

shaped layer having a first leg immediately adjacent to the gate electrode and extending to a first end along the gate electrode, and a second leg extending to a second end along said substrate, said at least one “

L-like”

shaped layer being formed of a single, metal-containing first material;

at least one spacer in contact with said first and second legs of said at least one “

L-like”

shaped layer; and

an intrinsically stressed layer covering said at least one gate structure, said at least one “

L-like”

shaped layer, said at least one spacer, and selected areas of said substrate, said intrinsically stressed layer in contact with said first and second ends of said “

L-like”

shaped layer, the intrinsically stressed layer being formed of the single, metal-containing first material.

2. The device of claim 1 wherein said intrinsically stressed layer is a contact-etching stop layer (CESL) that transfers stress to said at least one “

L-like”

shaped layer.

3. The device of claim 1 wherein at least one of said intrinsically stressed layer and said at least one “

L-like”

shaped layer comprises a high-k dielectric.

4. The device of claim 1 wherein said intrinsically stressed layer selectively creates one of compressive or tensile stresses in said substrate below said at least one gate structure.

5. The device of claim 1 wherein at least one of said at least one “

L-like”

shaped layer and said intrinsically stressed layer has a dielectric constant “

K”

greater than 5.

6. The device of claim 1 wherein the thickness of said at least one “

L-like”

shaped layer is less than about 25 nm.

7. The device of claim 1 wherein said at least one “

L-like”

shaped layer selectively creates one of compressive or tensile stresses in said substrate below said at least one gate structure.

8. The device of claim 1 wherein said at least one spacer is formed from materials selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride.

9. The device of claim 8 wherein said at least one spacer comprises at least two layers of materials, and said at least two layers of materials are selected from a combination consisting of oxide/nitride (ON), nitride/oxide (NO), and oxide/nitride/oxide (ONO).

10. The device of claim 1 further comprising a gate dielectric between said substrate and said gate electrode.

11. The device of claim 10 wherein said gate dielectric is selected from the group consisting of silicon nitride, or silicon oxynitride.

12. The device of claim 11 wherein the “

k”

value of said high k gate dielectric is greater than about 9.

13. The device of claim 12 wherein said high k gate dielectric is selected from the group consisting of an Hf-based high-k material, a Zr-based high-k material, or an Al-based high-k material.

14. The device of claim 1 wherein said substrate is silicon.

15. The device of claim 1 wherein said recess is less than about 500 Å

.

16. A semiconductor device comprising a substrate having a first recess and a second recess located within the substrate:

a first device on the substrate adjacent the first recess, the first device comprising a gate electrode, at least one “

L-like”

shaped layer in contact with the gate electrode, and a first spacer in contact with said at least one “

L-like”

shaped layer;

a second device on the substrate adjacent the second recess having at least one offset spacer and a second spacer in contact with said offset spacer; and

an intrinsically stressed layer covering said first device, said second device, said first spacer, said second spacer and in contact with said at least one “

L-like”

shaped layer, said at least one “

L-like”

shaped layer and the intrinsically stressed layer being formed of only a metal-based high-k first material.

17. The device of claim 16 wherein said first device is an NMOS device and said second device is a PMOS device, and said intrinsically stressed layer is a tensile stressed film.

18. The device of claim 16 wherein said first device is a PMOS device and said second device is an NMOS device, and said intrinsically stressed layer is a compressive stress film.