Material for forming adhesion reinforcing layer, adhesion reinforcing layer, semiconductor device, and manufacturing method thereof

• US 7,830,013 B2
• Filed: 04/03/2006
• Issued: 11/09/2010
• Est. Priority Date: 11/14/2005
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Nakata, Yoshihiro, Kon, Junichi, Imada, Tadahiro, Yano, Ei
• Primary Examiner(s): Smith; Matthew
• Assistant Examiner(s): Jefferson; Quovaunda
• Application Number:
  US11/395,263
• Publication Number:
  US 20070111539A1
• Time in Patent Office: 1,681 Days
• Field of Search: 438/99, 438/584, 438/778, 438/780, 438/781, 438/622, 438/FOR.135, 438/623, 438/FOR.395, 257/40, 257/632, 257/635, 257/642, 257/E51.001, 257/E51.024, 257/E51.046, 257/E51.027, 257/E21.028, 257/E21.584, 257/759, 522/172, 522/173, 522/178, 522/181, 522/904
• US Class Current: 257/759
• CPC Class Codes: C09D 183/04 Polysiloxanes
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/76807 for dual damascene structures

Abstract

The present invention aims at providing: a material for forming an adhesion reinforcing layer which can reinforce the adhesion between a low dielectric constant film, especially a low dielectric constant film containing an inorganic material, and other members; an adhesion reinforcing layer formed by the said material and exhibits superior adhesion; a fast and highly reliable semiconductor device having the adhesion reinforcing layer; and a manufacturing method thereof. The material for forming an adhesion reinforcing layer contains at least any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane. The adhesion reinforcing layer is formed by the said material. The manufacturing method of a semiconductor device includes a process for forming a low dielectric constant film and, at least before or after the process for forming a low dielectric constant film, a process for forming an adhesion reinforcing layer with the said material.

Claims

1. A material for forming an adhesion reinforcing layer comprising any one of organoalkoxysilane-based compositions having a basic functional group and organoalkoxysilane with a basic additive,

wherein the organoalkoxysilane is an oligomer which is produced by hydrolysis and condensation of an alkoxy group, and the concentration of the oligomer with respect to the material for forming an adhesion reinforcing layer is 0.1% by mass or less, and

the basic additive is at least one selected from the group consisting of:

sodium hydroxide, potassium hydroxide, lithium hydroxide, pyridine, pyrrole, piperazine, pyrrolidine, piperidine, picoline, monoethanolamine, diethanolamine, dimethylmonoethanolamine, monomethyldiethanolamine, triethanolamine, diazabicyclooctane, diazabicyclononane, diazabicycloundecene, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, ammonia, methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, pentylamine, octylamine, nonylamine, decylamine, N,N-dimethylamine, N,N-diethylamine, N,N-dipropylamine, N,N-dibutylamine, trimethylamine, triethylamine, tripropylamine, tributylamine, cyclohexylamine, trimethylimidine, 1-amino-3-methylbutane, dimethylglycine and 3-amino-3-methylamine.

2. The material for forming an adhesion reinforcing layer according to claim 1, wherein the basic functional group comprises nitrogen.

3. The material for forming an adhesion reinforcing layer according to claim 1, wherein the weight average molecular weight of the oligomer is 100 to 100,000.

4. The material for forming an adhesion reinforcing layer according to claim 1, wherein the material comprises a solvent of an identical component with a product which is obtained by hydrolysis of an alkoxy group.

5. The material for forming an adhesion reinforcing layer according to claim 1, wherein the added amount of the basic additive is 0.5% by mass to 20% by mass with respect to the material for forming an adhesion reinforcing layer.

6. A method for manufacturing a semiconductor device comprising:

forming a low dielectric constant film on a substrate, and

forming an adhesion reinforcing layer using a material for forming an adhesion reinforcing layer comprising any one of organoalkoxysilane-based compositions having a basic functional group and organoalkoxysilane with a basic additive,

wherein the organoalkoxysilane is an oligomer which is produced by hydrolysis and condensation of an alkoxy group, and the concentration of the oligomer with respect to the material for forming an adhesion reinforcing layer is 0.1% mass or less,

wherein the forming an adhesion reinforcing layer is performed at least any of before and after the forming a low dielectric constant film, and

the basic additive is at least one selected from the group consisting of sodium hydroxide, potassium hydroxide, lithium hydroxide, pyridine, pyrrole, piperazine, pyrrolidine, piperidine, picoline, monoethanolamine, diethanolamine, demethylmonoethanolamine, monomethyldiethanolamine, triethanolamine, diazabicyclooctane, diazabicyclononane, diazabicycloundecene, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, ammonia, methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, pentylamine, octylamine, nonylamine, decylamine, N,N-dimethylamine, N,N-diethylamine, N,N-dipropylamine, N,N-dibutylamine, trimethylamine, triethylamine, tripropylamine, tributylamine, cyclohexylamine, trimethylimidine, 1-amino-3-methylbutane, dimethylglycine and 3-amino-3-methylamine.

7. The method for manufacturing a semiconductor device according to claim 6, wherein the forming an adhesion reinforcing layer comprises coating a material for forming an adhesion reinforcing layer on a substrate followed by heating.

8. The method for manufacturing a semiconductor device according to claim 7, wherein the heating is performed at a temperature of 150°

C. to 250°

C.

9. The method for manufacturing a semiconductor device according to claim 6, wherein the forming an adhesion reinforcing layer comprises washing the substrate using any one of water and an organic solvent.

10. The method for manufacturing a semiconductor device according to claim 6, wherein the forming a low dielectric constant film comprises:

coating in which a liquid composition comprising an organosilicon compound obtained by hydrolysis tetraalkylorthosilicate and alkoxysilane represented by General Formula (1) below under the presence of tetraalkyl ammonium hydroxide is coated on a processed substrate;

X_nSi(OR)_4-n 

 

General Formula (1)

wherein, in General Formula (I), X represents any one of a hydrogen atom, a fluorine atom, an alkyl group with a carbon number of one to eight, a fluorine-substituted alkyl group, an aryl group and a vinyl group, R represents any one of a hydrogen atom, an alkyl group with a carbon number of one to eight, an aryl group and a vinyl group, and n is an integer of zero to three;

heating in which a film comprised of the liquid composition coated on the processed substrate is processed under heat at a temperature of 80°

C. to 350°

C.; and

baking in which the film heated in the heating process is baked at a temperature in a range between higher than 350°

C. and 450°

C. or below;

wherein the method for manufacturing a semiconductor device forms a low dielectric constant film having a dielectric constant of 2.5 or less.

11. The method for manufacturing a semiconductor device according to claim 10, wherein the baking process takes place under inert-gas atmosphere with an oxygen concentration of 100 ppm or less.

12. The method for manufacturing a semiconductor device according to claim 6, wherein the low dielectric constant film is arranged to contact with at least any one of an SiO₂ film, an SiN film, an SiC film, an SiOC film and an SiCN film through the adhesion reinforcing layer.

13. The method for manufacturing a semiconductor device according to claim 6, wherein the modulus of elasticity of the low dielectric film is 5 GPa or greater, and the hardness of the low dielectric film is 0.6 GPa or greater.