High forward current diodes for reverse write 3D cell
First Claim
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1. A nonvolatile memory device, comprising:
- at least one memory cell which comprises a diode and a metal oxide antifuse dielectric layer, the diode including a doped polycrystalline material that comprises a plurality of grains and a plurality of grain boundaries; and
a first electrode and a second electrode electrically contacting the at least one memory cell;
wherein in use, the diode acts as a read/write element of the memory cell by switching from a first stable resistivity state to a second stable resistivity state different from the first resistivity state in response to an applied bias such that at least some dopant atoms move from at least some of the plurality of grain boundaries to at least some of the plurality of grains;
wherein the resistivity state of the diode corresponds to a memory state of the memory cell.
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Abstract
A nonvolatile memory device includes at least one memory cell which comprises a diode and a metal oxide antifuse dielectric layer, and a first electrode and a second electrode electrically contacting the at least one memory cell. In use, the diode acts as a read/write element of the memory cell by switching from a first resistivity state to a second resistivity state different from the first resistivity state in response to an applied bias.
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Citations
20 Claims
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1. A nonvolatile memory device, comprising:
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at least one memory cell which comprises a diode and a metal oxide antifuse dielectric layer, the diode including a doped polycrystalline material that comprises a plurality of grains and a plurality of grain boundaries; and a first electrode and a second electrode electrically contacting the at least one memory cell; wherein in use, the diode acts as a read/write element of the memory cell by switching from a first stable resistivity state to a second stable resistivity state different from the first resistivity state in response to an applied bias such that at least some dopant atoms move from at least some of the plurality of grain boundaries to at least some of the plurality of grains; wherein the resistivity state of the diode corresponds to a memory state of the memory cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A nonvolatile memory device, comprising:
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a plurality of memory cells, each of the plurality of memory cells being electrically connected to a respective first electrode and a respective second electrode; wherein each memory cell of the plurality of memory cells comprises a diode and a metal oxide antifuse dielectric layer arranged in series between the respective first electrode and the respective second electrode, and the diode comprises a polycrystalline silicon, germanium or silicon-germanium p-i-n pillar diode having a substantially cylindrical shape which acts as a read/write element of each of the plurality of the memory cells, the polycrystalline silicon, germanium or silicon-germanium p-i-n pillar diode including a doped polycrystalline material having a degree of order; wherein in use, the diode of each of the plurality of the memory cells acts as a read/write element of each of the plurality of the memory cells by switching from a first stable resistivity state to a second stable resistivity state different from the first stable resistivity state in response to an applied bias such that the degree of order increases, and wherein the resistivity state of the diode corresponds to a memory state of the memory cell. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification