Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
First Claim
1. A nonvolatile memory cell comprising a steering element located in series with a storage element, wherein the storage element comprises a carbon resistivity switching resistivity switching material and the memory cell comprises a rewritable cell having multiple memory levels, wherein a height of the carbon resistivity switching material in a first direction from a first conductive electrode to a second conductive electrode is greater than a thickness of the resistivity switching material in second direction perpendicular to the first direction.
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Abstract
A nonvolatile memory cell includes a steering element located in series with a storage element. The storage element includes a carbon material and the memory cell includes a rewritable cell having multiple memory levels.
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Citations
25 Claims
- 1. A nonvolatile memory cell comprising a steering element located in series with a storage element, wherein the storage element comprises a carbon resistivity switching resistivity switching material and the memory cell comprises a rewritable cell having multiple memory levels, wherein a height of the carbon resistivity switching material in a first direction from a first conductive electrode to a second conductive electrode is greater than a thickness of the resistivity switching material in second direction perpendicular to the first direction.
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7. A method of programming a nonvolatile memory cell comprising a steering element located in series with a storage element, wherein the storage element comprises a carbon material, the method comprising placing the cell into at least two different memory levels for at least two programming cycles, wherein the carbon material comprises polycrystalline carbon having a first Raman spectrum peak between 1300 and 1350 cm−
- 1 and a second Raman spectrum peak between 1600 and 1650 cm−
1. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
- 1 and a second Raman spectrum peak between 1600 and 1650 cm−
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17. A method of programming a nonvolatile memory cell comprising a diode steering element located in series with a carbon material storage element, comprising:
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performing a first programming cycle comprising; applying a reset pulse to change a resistivity state of the carbon material from a first state to a second state; and applying a first set pulse to change a resistivity state of the carbon material from a second state to a third state; applying a second set pulse to change a resistivity state of the carbon material from the third state to a fourth state; and applying a third set pulse to change a resistivity state of the carbon material from the fourth state to the first state; and performing a second programming cycle comprising; applying the reset pulse to change a resistivity state of the carbon material from the first state to the second state; applying the first set pulse to change a resistivity state of the carbon material from the second state to the third state; applying the second set pulse to change a resistivity state of the carbon material from the third state to the fourth state; and applying the third set pulse to change a resistivity state of the carbon material from the fourth state to the first state. - View Dependent Claims (18, 19)
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20. A method of programming a nonvolatile memory cell comprising a steering element located in series with a storage element, wherein the storage element comprises a carbon material, the method comprising placing the cell into at least two different memory levels for at least two programming cycles;
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wherein the step of placing the cell into at least two different memory levels during a first programming cycle comprises; applying a reset pulse to change a resistivity state of the carbon material from a first state to a second state; applying a first set pulse to change a resistivity state of the carbon material from a second state to a third state; applying a second set pulse to change a resistivity state of the carbon material from the third state to a fourth state; and applying a third set pulse to change a resistivity state of the carbon material from the fourth state to the first state; and further comprising performing a second programming cycle comprising; applying the reset pulse to change a resistivity state of the carbon material from the first state to the second state; applying the first set pulse to change a resistivity state of the carbon material from the second state to the third state; applying the second set pulse to change a resistivity state of the carbon material from the third state to the fourth state; and applying the third set pulse to change a resistivity state of the carbon material from the fourth state to the first state; wherein; the reset pulse and the first, second and third set pulses comprise forward bias pulses; and the reset pulse has a larger amplitude than the first, second and third set pulses. - View Dependent Claims (21, 22, 23, 24)
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25. A method of programming a nonvolatile memory cell comprising a steering element located in series with a storage element, wherein the storage element comprises a carbon material, the method comprising placing the cell into at least two different memory levels for at least two programming cycles and further comprising testing the cell in nitrogen ambient at a temperature of about 200°
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Specification