Implants based on bipolar metal oxide semiconductor (MOS) electronics
First Claim
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1. A retinal prosthesis device, comprising:
- an electrode array comprising an array of electrodes and configured for implantation on a retina of an eye to output electrical pulses to optical nerves of the eye;
an implantation electronic chip for implantation within the eye comprising bipolar metal oxide semiconductor (MOS) shift registers that are direct current (DC) biased at or near a natural electrical ground potential of the eye, the implantation electronic chip responsive to a modulated image-carrying electrical signal to produce an array of electrical currents to the array of electrodes of the electrode array to cause the output of the electrical pulses to optical nerves of the eye; and
an electrical connection connected between the implantation electronic chip and the electrode array.
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Abstract
Intraocular and periocular implantation devices based on one or more implantation electronic chips for implantation within the eye to include a bipolar MOS circuit that is DC biased at or near a natural electrical ground potential of the eye. Described examples include retinal prosthesis devices and techniques that use bipolar MOS electronics.
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Citations
14 Claims
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1. A retinal prosthesis device, comprising:
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an electrode array comprising an array of electrodes and configured for implantation on a retina of an eye to output electrical pulses to optical nerves of the eye; an implantation electronic chip for implantation within the eye comprising bipolar metal oxide semiconductor (MOS) shift registers that are direct current (DC) biased at or near a natural electrical ground potential of the eye, the implantation electronic chip responsive to a modulated image-carrying electrical signal to produce an array of electrical currents to the array of electrodes of the electrode array to cause the output of the electrical pulses to optical nerves of the eye; and an electrical connection connected between the implantation electronic chip and the electrode array. - View Dependent Claims (2, 3, 4, 5)
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6. A retinal prosthesis device, comprising:
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an electrode array comprising an array of electrodes and configured for implantation on a retina of an eye to output electrical pulses to optical nerves of the eye; an implantation electronic chip for implantation in the eye comprising a demodulator circuit that receives and processes a time-division multiplexed (TDM) image-carrying electrical signal, a demultiplexer circuit to process the output from the demodulator circuit to produce an array of pixel signals representing an image carried in the modulated image-carrying electrical signal, and a current generator circuit responsive to the array of pixel signals to produce an array of electrical currents to the array of electrodes of the electrode array to cause the output of the electrical pulses to optical nerves of the eye, wherein the demultiplexer circuit comprises bipolar metal oxide semiconductor (MOS) shift registers that are direct current (DC) biased at or near a natural electrical ground potential of the eye; and an electrical connection connected between the implantation electronic chip and the electrode array. - View Dependent Claims (7, 8, 9, 10)
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11. An intraocular implantation device, comprising:
an implantation electronic chip for implantation within an eye comprising a bipolar metal oxide semiconductor (MOS) circuit that is direct current (DC) biased at or near a natural electrical ground potential of the eye. - View Dependent Claims (12, 13)
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14. A periocular implantation device, comprising:
an implantation electronic chip for implantation within an eye comprising a bipolar metal oxide semiconductor (MOS) circuit that is direct current (DC) biased at or near a natural electrical ground potential of the eye.
Specification