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Implants based on bipolar metal oxide semiconductor (MOS) electronics

  • US 7,831,309 B1
  • Filed: 12/06/2007
  • Issued: 11/09/2010
  • Est. Priority Date: 12/06/2006
  • Status: Expired due to Fees
First Claim
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1. A retinal prosthesis device, comprising:

  • an electrode array comprising an array of electrodes and configured for implantation on a retina of an eye to output electrical pulses to optical nerves of the eye;

    an implantation electronic chip for implantation within the eye comprising bipolar metal oxide semiconductor (MOS) shift registers that are direct current (DC) biased at or near a natural electrical ground potential of the eye, the implantation electronic chip responsive to a modulated image-carrying electrical signal to produce an array of electrical currents to the array of electrodes of the electrode array to cause the output of the electrical pulses to optical nerves of the eye; and

    an electrical connection connected between the implantation electronic chip and the electrode array.

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