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Titanium silicon nitride deposition

  • US 7,833,906 B2
  • Filed: 12/11/2008
  • Issued: 11/16/2010
  • Est. Priority Date: 12/11/2008
  • Status: Active Grant
First Claim
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1. A method for forming a titanium silicon nitride film, comprising:

  • providing a plurality of semiconductor substrates in a deposition chamber of a batch furnace, wherein the deposition chamber can accommodate 25 or more substrates;

    depositing titanium silicon nitride on the substrates by performing a plurality of deposition cycles, each cycle comprising the following steps;

    A. flowing TiCl4 into the chamber while simultaneously flowing NH3 into the chamber, the NH3 flowing into the chamber at a first flow rate;

    B. stopping the flow of TiCl4;

    C. flowing NH3 into the chamber at a second flow rate higher than the first flow rate; and

    D. flowing a silicon precursor into the chamber.

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