Titanium silicon nitride deposition
First Claim
1. A method for forming a titanium silicon nitride film, comprising:
- providing a plurality of semiconductor substrates in a deposition chamber of a batch furnace, wherein the deposition chamber can accommodate 25 or more substrates;
depositing titanium silicon nitride on the substrates by performing a plurality of deposition cycles, each cycle comprising the following steps;
A. flowing TiCl4 into the chamber while simultaneously flowing NH3 into the chamber, the NH3 flowing into the chamber at a first flow rate;
B. stopping the flow of TiCl4;
C. flowing NH3 into the chamber at a second flow rate higher than the first flow rate; and
D. flowing a silicon precursor into the chamber.
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Abstract
Titanium silicon nitride (TiSiN) films are formed in a cyclic chemical vapor deposition process. In some embodiments, the TiSiN films are formed in a batch reactor using TiCl4, NH3 and SiH4 as precursors. Substrates are provided in a deposition chamber of the batch reactor. In each deposition cycle, a TiN layer is formed on the substrates by flowing TiCl4 into the deposition chamber simultaneously with NH3. The deposition chamber is subsequently flushed with NH3. to prepare the TiN layer for silicon incorporation. SiH4 is subsequently flowed into the deposition chamber. Silicon from the SiH4 is incorporated into the TiN layers to form TiSiN. Exposing the TiN layers to NH3 before the silicon precursor has been found to facilitate efficient silicon incorporation into the TiN layers to form TiSiN.
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Citations
9 Claims
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1. A method for forming a titanium silicon nitride film, comprising:
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providing a plurality of semiconductor substrates in a deposition chamber of a batch furnace, wherein the deposition chamber can accommodate 25 or more substrates; depositing titanium silicon nitride on the substrates by performing a plurality of deposition cycles, each cycle comprising the following steps; A. flowing TiCl4 into the chamber while simultaneously flowing NH3 into the chamber, the NH3 flowing into the chamber at a first flow rate; B. stopping the flow of TiCl4; C. flowing NH3 into the chamber at a second flow rate higher than the first flow rate; and D. flowing a silicon precursor into the chamber. - View Dependent Claims (2, 4, 5, 6, 7, 8, 9)
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3. A method for forming a titanium silicon nitride film, comprising:
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providing a plurality of semiconductor substrates in a deposition chamber of a batch furnace, wherein the deposition chamber can accommodate 25 or more substrates; depositing titanium silicon nitride on the substrates by performing a plurality of deposition cycles, each cycle comprising the following steps; A. flowing TiCl4 into the chamber while simultaneously flowing NH3 into the chamber, the NH3 flowing into the chamber at a first flow rate; B. stopping the flow of TiCl4; C. flowing NH3 into the chamber at a second flow rate higher than the first flow rate; and D. flowing a silicon precursor into the chamber; and further comprising; providing a desired resistivity for the titanium silicon nitride; and selecting a ratio of the step A to the step D based upon the desired resistivity.
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Specification
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- Resources
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Current AssigneeASM International NV
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Original AssigneeASM International NV
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InventorsKnapp, Martin A., Probst, Guido
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Primary Examiner(s)Ghyka; Alexander G
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Application NumberUS12/333,161Publication NumberTime in Patent Office705 DaysField of Search438/680, 438/683, 438/685, 438/785US Class Current438/680CPC Class CodesC23C 16/34 Nitrides C23C16/303 takes p...C23C 16/45531 specially adapted for makin...H01L 21/28556 by chemical means, e.g. CVD...H01L 21/76841 Barrier, adhesion or liner ...H01L 21/76856 by treatment in plasmas or ...H01L 21/76862 Bombardment with particles,...
