Device made of single-crystal silicon

• US 7,834,452 B2
• Filed: 06/27/2008
• Issued: 11/16/2010
• Est. Priority Date: 07/06/2007
• Status: Active Grant

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Kaelberer, Arnd, Baumann, Helmut, Scheuerer, Roland, Weber, Heribert
• Primary Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US12/215,655
• Publication Number:
  US 20090008749A1
• Time in Patent Office: 872 Days
• Field of Search: 257/506, 257684-730, 257/E21.056, 257/561, 257/564, 257/23.004, 257/25.012, 257/29.022
• US Class Current: 257/730
• CPC Class Codes: B81C 1/00539 Wet etching
• CPC Class Codes: B81C 1/00619 Forming high aspect ratio structures having deep steep walls
• CPC Class Codes: B81C 1/00626 Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
• CPC Class Codes: H01L 21/30608 Anisotropic liquid etching H01L21/3063 takes precedence

Abstract

A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

Claims

1. A device made of single-crystal silicon having a first side, a second side, which is situated opposite to the first side, and a third side, which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending, in a first area, in a 111 plane of the single-crystal silicon, wherein the third side extends, in a second area, in a 110 plane of the single-crystal silicon.

2. The device made of single-crystal silicon as recited in claim 1, wherein the third side extends, in a third area, in a 111 plane of the single-crystal silicon, the second area being situated between the first area and the third area.

3. The device made of single-crystal silicon as recited in claim 1 wherein the device has a through opening from the first side to the second side, and the third side is a side wall of the through opening.

4. The device made of single-crystal silicon as recited in claim 3, wherein the through opening has a first opening width on the first side and a second opening width on the second side, the first opening width is greater than the second opening width, and the second opening width is greater than that predefined by a thickness of the device between the first side and the second side and an angle of the 111 plane of the single-crystal silicon starting from the first opening width.