Methods for forming layers within a MEMS device using liftoff processes

• US 7,835,093 B2
• Filed: 02/08/2010
• Issued: 11/16/2010
• Est. Priority Date: 08/19/2005
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Wang, Chun-Ming
• Primary Examiner(s): Dinh; Jack
• Application Number:
  US12/702,132
• Publication Number:
  US 20100200938A1
• Time in Patent Office: 281 Days
• Field of Search: 359290-292, 359/900, 438/706, 438/713, 438/734, 438/737, 438/738, 438/742, 216/24, 216/41, 216/52, 427/162, 427/534
• US Class Current: 359/290
• CPC Class Codes: B81B 2201/047 Optical MEMS not provided for in B81B2201/042 - B81B2201/045
• CPC Class Codes: B81B 2203/0163 Spring holders
• CPC Class Codes: B81B 2203/019 characterized by their profile
• CPC Class Codes: B81B 2203/0307 Anchors
• CPC Class Codes: B81B 2203/053 Translation according to an axis perpendicular to the substrate
• CPC Class Codes: B81B 3/0072 For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
• CPC Class Codes: B81C 1/00142 Bridges deformable micromirrors G02B26/0841
• CPC Class Codes: B81C 1/00666 Treatments for controlling internal stress or strain in MEMS structures
• CPC Class Codes: B81C 2201/0167 by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: Y10S 359/90 Methods

Abstract

Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Claims

1. A method of fabricating a MEMS device, comprising:

forming an electrode layer over a substrate;

forming a sacrificial layer over the electrode layer;

patterning the sacrificial layer to form at least one tapered aperture extending through the sacrificial layer;

forming a movable layer over the patterned sacrificial layer;

forming a mask layer over at least a portion of the movable layer, the mask layer comprising an aperture overlying the tapered aperture extending through the sacrificial layer;

depositing a support layer over the mask layer; and

removing the mask layer via a liftoff process, thereby forming a support structure overlying at least a portion of the movable layer and located at least partially within the tapered aperture extending through the sacrificial layer.

2. The method of claim 1, wherein the mask layer comprises an overhanging portion extending around the aperture in the mask layer.

3. The method of claim 1, wherein the support structure comprises a tapered edge.

4. The method of claim 1, wherein the support layer is deposited directly over a portion of the movable layer.

5. The method of claim 1, wherein the support layer comprises the same material as the movable layer.

6. The method of claim 1, additionally comprising performing a release etch to remove the sacrificial layer, forming an air gap located between the electrode layer and the movable layer.

7. The method of claim 1, forming the movable layer comprises:

forming a reflective sublayer over the sacrificial layer; and

forming a mechanical sublayer over the reflective sublayer.

8. The method of claim 7, wherein the support layer comprises the same material as the mechanical sublayer.

9. The method of claim 1, wherein the MEMS device comprises an interferometric modulator.

10. The method of claim 1, wherein the mask layer comprises a photoresist material.

11. The method of claim 10, wherein the mask layer comprises a bilayer photoresist.

12. The method of claim 10, wherein forming the mask layer comprises:

depositing a layer of liftoff material;

depositing a layer of photoresist material;

patterning the photoresist material to form an upper aperture extending through the photoresist material; and

etching the liftoff material underlying the upper aperture extending though the photoresist material, wherein the etching comprises undercutting the layer of photoresist material to form the overhanging portion of the mask layer, thereby forming the aperture extending through the mask layer.

13. The method of claim 1, wherein the support layer is deposited via an evaporation or sputtering process.

14. The method of claim 1, additionally comprising exposing the support layer to ultrasonic energy prior to removing the mask layer via a liftoff process.

15. A MEMS device formed by the method of claim 1.