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Atomic layer deposition method of depositing an oxide on a substrate

  • US 7,838,084 B2
  • Filed: 07/20/2006
  • Issued: 11/23/2010
  • Est. Priority Date: 12/09/2003
  • Status: Active Grant
First Claim
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1. An atomic layer deposition method of depositing an oxide on a substrate comprising:

  • chemisorbing a first species onto a substrate to form a first species monolayer onto the substrate from a gaseous precursor, the first species monolayer being at least substantially saturated;

    contacting the chemisorbed first species with an oxygen plasma derived at least in part from at least one of O2 and O3 and generated remote from the substrate, and with a plasma nitrogen generated remote from the substrate, effective to react with the first species to form a monolayer that is at least substantially saturated and comprises an oxide of a component of the first species monolayer, the remote plasma oxygen and the remote plasma nitrogen being generated in different remote plasma generating chambers; and

    successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous oxide on the substrate.

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