Atomic layer deposition method of depositing an oxide on a substrate
First Claim
1. An atomic layer deposition method of depositing an oxide on a substrate comprising:
- chemisorbing a first species onto a substrate to form a first species monolayer onto the substrate from a gaseous precursor, the first species monolayer being at least substantially saturated;
contacting the chemisorbed first species with an oxygen plasma derived at least in part from at least one of O2 and O3 and generated remote from the substrate, and with a plasma nitrogen generated remote from the substrate, effective to react with the first species to form a monolayer that is at least substantially saturated and comprises an oxide of a component of the first species monolayer, the remote plasma oxygen and the remote plasma nitrogen being generated in different remote plasma generating chambers; and
successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous oxide on the substrate.
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Abstract
The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.
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Citations
29 Claims
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1. An atomic layer deposition method of depositing an oxide on a substrate comprising:
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chemisorbing a first species onto a substrate to form a first species monolayer onto the substrate from a gaseous precursor, the first species monolayer being at least substantially saturated; contacting the chemisorbed first species with an oxygen plasma derived at least in part from at least one of O2 and O3 and generated remote from the substrate, and with a plasma nitrogen generated remote from the substrate, effective to react with the first species to form a monolayer that is at least substantially saturated and comprises an oxide of a component of the first species monolayer, the remote plasma oxygen and the remote plasma nitrogen being generated in different remote plasma generating chambers; and successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous oxide on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 24, 25)
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20. An atomic layer deposition method of depositing an oxide on a substrate comprising:
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chemisorbing a first species onto a substrate to form a first species monolayer onto the substrate from a gaseous precursor, the first species monolayer being at least substantially saturated; contacting the chemisorbed first species with an oxygen plasma derived at least in part from at least one of O2 and O3 and generated remote from the substrate, and with a plasma nitrogen generated remote from the substrate, effective to react with the first species to form a monolayer that is at least substantially saturated and comprises an oxide of a component of the first species monolayer, the remote plasma oxygen and the remote plasma nitrogen being generated in different remote plasma generating chambers; and successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous oxide on the substrate comprising InxSnyO on the substrate, the gaseous precursor comprising an indium-containing precursor and a tin-containing precursor which are fed to the deposition chamber simultaneously. - View Dependent Claims (26, 27)
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21. An atomic layer deposition method of depositing an oxide on a substrate comprising:
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chemisorbing a first species onto a substrate to form a first species monolayer onto the substrate from a gaseous precursor, the first species monolayer being at least substantially saturated; contacting the chemisorbed first species with an oxygen plasma derived at least in part from at least one of O2 and O3 and generated remote from the substrate, and with a plasma nitrogen generated remote from the substrate, effective to react with the first species to form a monolayer that is at least substantially saturated and comprises an oxide of a component of the first species monolayer, the remote plasma oxygen and the remote plasma nitrogen being generated in different remote plasma generating chambers; and successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous oxide on the substrate comprising InxSnyO on the substrate, the gaseous precursor comprising an indium-containing precursor and a tin-containing precursor which are fed to the deposition chamber at different times. - View Dependent Claims (22, 23, 28, 29)
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Specification