Deposition of perovskite and other compound ceramic films for dielectric applications
First Claim
1. A method of depositing a crystalline perovskite layer on a substrate, comprising:
- placing the substrate into a reactor;
flowing a gaseous mixture through the reactor;
providing pulsed DC power to a conducting ceramic target in the reactor through a narrow band rejection filter such that a voltage on the conducting ceramic target alternates between positive and negative voltages, wherein the conducting ceramic target is formed of a perovskite material and is positioned opposite the substrate;
providing, to the substrate, an RF bias power that corresponds to the narrow band rejection filter, wherein the crystalline perovskite layer is formed on the substrate without high temperature annealing.
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Abstract
In accordance with the present invention, deposition of perovskite material, for example barium strontium titanite (BST) film, by a pulsed-dc physical vapor deposition process or by an RF sputtering process is presented. Such a deposition can provide a high deposition rate deposition of a layer of perovskite. Some embodiments of the deposition address the need for high rate deposition of perovskite films, which can be utilized as a dielectric layer in capacitors, other energy storing devices and micro-electronic applications. Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the BST layer.
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Citations
26 Claims
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1. A method of depositing a crystalline perovskite layer on a substrate, comprising:
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placing the substrate into a reactor; flowing a gaseous mixture through the reactor; providing pulsed DC power to a conducting ceramic target in the reactor through a narrow band rejection filter such that a voltage on the conducting ceramic target alternates between positive and negative voltages, wherein the conducting ceramic target is formed of a perovskite material and is positioned opposite the substrate; providing, to the substrate, an RF bias power that corresponds to the narrow band rejection filter, wherein the crystalline perovskite layer is formed on the substrate without high temperature annealing. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A capacitor structure, comprising:
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a first conducting electrode layer; a crystalline dielectric perovskite layer deposited over the first conducting electrode layer, wherein the crystalline dielectric perovskite layer is formed without high temperature annealing by depositing a crystalline perovskite film in a pulsed DC reactive ion process with substrate bias, wherein a conducting ceramic target receives alternating negative and positive voltages from a narrow band rejection filter based on a frequency associated with the substrate bias; and a second conducting electrode layer deposited over the crystalline dielectric perovskite layer. - View Dependent Claims (18)
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19. A stacked capacitor structure, comprising:
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one or more capacitor stacks deposited on a substrate, wherein each capacitor stack comprises; a bottom electrode layer, a crystalline dielectric perovskite layer deposited over the bottom electrode layer without annealing, wherein the crystalline dielectric perovskite layer is formed by depositing a crystalline perovskite film in a pulsed DC reactive ion process with substrate bias, wherein a conducting ceramic target receives alternating negative and positive voltages from a narrow band rejection filter based on a frequency associated with the substrate bias, and a top electrode layer deposited over the one or more capacitor stacks. - View Dependent Claims (20, 21)
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22. A method of producing a capacitor, comprising:
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loading a substrate into a cluster tool; depositing a crystalline dielectric perovskite layer over a substrate without high temperature annealing in a chamber of the cluster tool, wherein the crystalline dielectric perovskite layer is formed by depositing a crystalline perovskite film in a pulsed DC reactive ion process with substrate bias, wherein a conducting ceramic target receives alternating negative and positive voltages from a narrow band rejection filter based on a frequency associated with the substrate bias. - View Dependent Claims (23, 24, 25, 26)
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Specification