Vertical nitride semiconductor light emitting diode and method of manufacturing the same

• US 7,838,317 B2
• Filed: 08/20/2009
• Issued: 11/23/2010
• Est. Priority Date: 08/21/2006
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung LED Co., Ltd. (Samsung Electronics Co. Ltd.)
• Inventors: Baik, Doo Go, Lee, Su Yeol, Yoon, Sang Ho, Jang, Tae Sung, Woo, Jong Gun, Choi, Seok Beom
• Primary Examiner(s): Bryant; Kiesha R
• Assistant Examiner(s): Yang; Minchul
• Application Number:
  US12/544,868
• Publication Number:
  US 20090311817A1
• Time in Patent Office: 460 Days
• Field of Search: 438/46, 438/47, 438/706, 257/E21.366
• US Class Current: 438/47
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

Claims

1. A method of manufacturing a vertical nitride-based semiconductor LED comprising:

sequentially forming a buffer layer, an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate;

forming a p-electrode on the p-type nitride semiconductor layer;

forming a structure support layer on the p-electrode;

removing the substrate through an LLO (Laser Lift-Off) process;

selectively etching a portion of the buffer layer, on which the substrate is removed, so as to flatly expose a portion of the n-type nitride semiconductor layer;

forming irregularities on the surface of the buffer layer which is not etched; and

forming an n-electrode on the flatly-exposed n-type nitride semiconductor layer.

2. The method according to claim 1,

wherein in the etching of the buffer layer, a dry-etching process is used.

3. A method of manufacturing a vertical nitride-based semiconductor LED comprising:

sequentially forming a buffer layer, an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate;

forming a p-electrode on the p-type nitride semiconductor layer;

forming a structure support layer on the p-electrode;

removing the substrate through an LLO process;

forming irregularities on the entire surface of the buffer layer where the substrate is removed;

selectively etching a portion of the buffer layer, on which the irregularities are formed, so as to flatly expose a portion of the n-type nitride semiconductor layer; and

forming an n-electrode on the flatly-exposed n-type nitride semiconductor layer.

4. The method according to claim 3,

wherein in the etching of the buffer layer, a dry-etching process is used.