Method of enhancing an etch system
First Claim
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1. A method, comprising:
- receiving a substrate in an etch chamber, the substrate comprising a silicon on insulator (SOI) wafer, including a handle layer comprising an insulating layer, a bonding layer comprising a buried oxide layer in communication with the handle layer, and a device layer in communication with the bonding layer, the device layer comprising a silicon layer having one or more devices patterned therein, each device having a bottom surface attached to the bonding layer; and
,separating each of the one or more devices from the substrate, wherein separating each of the one or more devices from the substrate comprises releasing the bottom surface of each of the devices from the bonding layer using a dry etch process.
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Abstract
Systems and techniques for enhanced etch processes. For example, a substrate may be received in an etch chamber, where the substrate comprises a handle layer, a bonding layer in communication with the handle layer, and a device layer in communication with the bonding layer. The device layer may comprise a device layer patterned therein and having a bottom surface, where the bottom surface of the device is attached to the bonding layer. The bonding layer may comprise an oxide annealed at relatively low temperature. A dry etch process may be performed to release the bottom surface of the device from the bonding layer.
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Citations
16 Claims
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1. A method, comprising:
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receiving a substrate in an etch chamber, the substrate comprising a silicon on insulator (SOI) wafer, including a handle layer comprising an insulating layer, a bonding layer comprising a buried oxide layer in communication with the handle layer, and a device layer in communication with the bonding layer, the device layer comprising a silicon layer having one or more devices patterned therein, each device having a bottom surface attached to the bonding layer; and
,separating each of the one or more devices from the substrate, wherein separating each of the one or more devices from the substrate comprises releasing the bottom surface of each of the devices from the bonding layer using a dry etch process. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A processing system comprising:
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means for receiving a substrate in an etch chamber, the substrate comprising a silicon on insulator (SOI) wafer, including a handle layer comprising an insulator layer, a bonding layer comprising a buried oxide layer in communication with the handle layer, and a device layer in communication with the bonding layer, the device layer comprising a silicon layer having one or more devices patterned therein, each device having a bottom surface attached to the bonding layer; and
,means for releasing the bottom surface of each of the devices from the bonding layer using a dry etch process to separate each of the devices from the substrate. - View Dependent Claims (8, 9, 10, 11, 12)
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13. An article comprising a machine-readable medium embodying information indicative of instructions that when performed by one or more machines result in operations comprising:
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receiving a substrate in an etch chamber, the substrate comprising a silicon on insulator (SOI) wafer, including a handle layer comprising an insulator layer, a bonding layer comprising a buried oxide layer in communication with the handle layer, and a device layer in communication with the bonding layer, the device layer comprising a silicon layer having one or more devices patterned therein, each device having a bottom surface attached to the bonding layer; and
,separating the plurality of devices from the substrate, wherein separating the plurality of devices from the substrate comprises releasing the bottom surface of each of the one or more devices from the bonding layer using a dry etch process. - View Dependent Claims (14, 15, 16)
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Specification