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Method of enhancing an etch system

  • US 7,838,322 B1
  • Filed: 02/28/2006
  • Issued: 11/23/2010
  • Est. Priority Date: 02/28/2005
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • receiving a substrate in an etch chamber, the substrate comprising a silicon on insulator (SOI) wafer, including a handle layer comprising an insulating layer, a bonding layer comprising a buried oxide layer in communication with the handle layer, and a device layer in communication with the bonding layer, the device layer comprising a silicon layer having one or more devices patterned therein, each device having a bottom surface attached to the bonding layer; and

    ,separating each of the one or more devices from the substrate, wherein separating each of the one or more devices from the substrate comprises releasing the bottom surface of each of the devices from the bonding layer using a dry etch process.

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