Semiconductor device

• US 7,838,348 B2
• Filed: 12/03/2009
• Issued: 11/23/2010
• Est. Priority Date: 03/12/2004
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Hoffman, Randy L., Herman, Gregory S., Mardilovich, Peter P.
• Primary Examiner(s): MONBLEAU, DAVIENNE N
• Assistant Examiner(s): Nguyen; Dilinh P
• Application Number:
  US12/630,632
• Publication Number:
  US 20100078634A1
• Time in Patent Office: 355 Days
• Field of Search: 438/483, 438/285, 438/158, 438/151, 438/104, 438/85, 438/754, 438/48, 438/128, 438/149, 438/157, 257/E29.1, 257/E29.117, 257/E29.08, 257/E29.101
• US Class Current: 438/151
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.

Claims

1. A method of forming a channel, comprising:

providing at least one precursor composition including one or more precursor compounds that include zinc-germanium oxide, zinc-lead oxide, cadmium-germanium oxide, cadmium-tin oxide, cadmium-lead oxide; and

depositing the channel including the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple a drain electrode and a source electrode.

2. The method of claim 1, wherein depositing the channel includes depositing one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

3. The method of claim 1, wherein the precursor composition includes a liquid form.

4. The method of claim 3, wherein depositing the channel includes an ink jet deposition technique when the precursor composition includes the liquid form.

5. The method of claim 1, wherein the precursor composition includes one or more precursor compounds that include A_x, one or more precursor compounds that include B_x, and one or more precursor compounds that include C_x, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ge, Sn, Pb, each C is selected from the group of Zn, Cd, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, and C are different.

6. The method of claim 5, wherein the one or more precursor compounds includes one or more precursor compounds that include D_x, wherein each D is selected from the group of Zn, Cd, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.

7. The method of claim 6, wherein the one or more precursor compounds includes one or more precursor compounds that include E_x, wherein E is selected from the group of Zn, Cd, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, C, D, and E are different.

8. The method of claim 1, wherein depositing the channel includes vaporizing the precursor composition to form a vaporized precursor composition, and depositing the vaporized precursor composition using a physical vapor deposition technique.

9. The method of claim 8, wherein the physical vapor deposition technique includes one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.

10. A method of manufacturing a semiconductor device, comprising:

providing a drain electrode;

providing a source electrode;

step for providing at least one precursor composition including one or more precursor compounds that include;

zinc-germanium oxide, zinc-lead oxide, cadmium-germanium oxide, cadmium-tin oxide, cadmium-lead oxide;

step for depositing a channel including depositing the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple the drain electrode and the source electrode;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel.

11. The method of claim 10, including providing a substrate or substrate assembly;

and forming the semiconductor device on the substrate or substrate assembly.

12. The method of claim 10, wherein the step for depositing a channel includes an ink jet deposition technique.

13. The method of claim 10, wherein providing the source, the drain, and the gate electrodes includes providing a substantially transparent form of the source, the drain, and the gate electrodes.

14. The method of claim 10, wherein the precursor composition includes one or more precursor compounds that include A_x, one or more precursor compounds that include B_x, and one or more precursor compounds that include C_x, wherein each A is selected from the group of Zn, Cd, each B is selected from the group Ge, Sn, Pb, each C is selected from the group of Zn, Cd, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, and C are different.

15. The method of claim 14, wherein the one or more precursor compounds includes one or more precursor compounds that include D_x, wherein each D is selected from the group of Zn, Cd, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.

16. The method of claim 15, wherein the one or more precursor compounds includes one or more precursor compounds that include E_x, wherein E is selected from the group of Zn, Cd, Ge, Sn, Pb each x is independently a non-zero integer, and wherein each of A, B, C, D, and E are different.

17. The method of claim 16, wherein the step for depositing a channel includes step for vaporizing the precursor composition to form a vaporized precursor composition, and depositing the vaporized precursor composition using a physical vapor deposition technique including one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.

18. A semiconductor device formed by steps, comprising:

providing a drain electrode;

providing a source electrode;

providing a precursor composition that includes one or more precursor compounds that include;

zinc oxide, cadmium oxide, germanium oxide, tin oxide, lead oxide, zinc-germanium oxide, zinc-lead oxide, cadmium-germanium oxide, cadmium-tin oxide, cadmium-lead oxide;

depositing a channel including the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple the drain electrode and the source electrode;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel.

19. The semiconductor device of claim 18, wherein the precursor composition includes one or more precursor compounds that include A_x, one or more precursor compounds that include B_x, and one or more precursor compounds that include C_x, wherein each A is selected from the group of Zn, Cd, each B is selected from the group Ge, Sn, Pb, each C is selected from the group of Zn, Cd, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, and C are different.

20. The semiconductor device of claim 19, wherein the one or more precursor compounds includes D_x, wherein each D is selected from the group of Zn, Cd, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.

21. The semiconductor device of claim 20, wherein the one or more precursor compounds includes one or more precursor compounds that include E_x, wherein E is selected from the group of Zn, Cd, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, C, D, and E are different.

22. The semiconductor device of claim 18, wherein depositing the channel includes vaporizing the precursor composition to form a vaporized precursor composition, and depositing the vaporized precursor composition using a physical vapor deposition technique including one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.

23. The semiconductor device of claim 18, wherein providing the precursor composition includes providing a liquid form of the precursor composition.

24. The semiconductor device of claim 23, wherein depositing the channel includes an ink jet deposition technique when the precursor composition includes the liquid form.

25. A method for operating a semiconductor device, comprising:

providing a semiconductor device that includes a source electrode a drain electrode, and a channel to electrically couple the source electrode and the drain electrode, a gate electrode separated from the channel by a gate dielectric, wherein the channel includes a multicomponent oxide selected from at least one metal cation from group 12, at least one metal cation from group 14, wherein group 12 cations include Zn and Cd, and group 14 cations include Ge, Sn, and Pb, to form at least one of a three-component oxide, a four-component oxide, a five-component oxide, and a two-component oxide that includes zinc-germanium oxide, zinc-lead oxide, cadmium-germanium oxide, cadmium-tin oxide, cadmium-lead oxide; and

applying a voltage to the gate electrode to effect a flow of electrons through the channel.

26. The method of claim 25, wherein operating the semiconductor device includes using the semiconductor device as a switch in a display device.

27. The method of claim 25, wherein operating the semiconductor device includes conducting electrons through the channel in a linear region of operation.