×

Semiconductor device with bulb-type recessed channel and method for fabricating the same

  • US 7,838,364 B2
  • Filed: 09/27/2007
  • Issued: 11/23/2010
  • Est. Priority Date: 09/29/2006
  • Status: Active Grant
First Claim
Patent Images

1. A method for fabricating a semiconductor device, the method comprising:

  • providing a substrate having a bulb-type recessed region;

    forming a gate insulating layer over the bulb-type recessed region and the substrate; and

    forming a gate conductive layer over the gate insulating layer and filing the bulb-type recessed region, wherein the gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers, wherein forming the gate conductive layers comprisesforming a first gate conductive layer having a first thickness over the gate insulating layer,performing a thermal treatment on the first gate conductive layer to diffuse out vacancies melted in equilibrium inside the first gate conductive layer, andforming a second gate conductive layer having a second thickness over the first gate conductive layer, wherein the second gate conductive layer fills the bulb-type recessed region.

View all claims
  • 4 Assignments
Timeline View
Assignment View
    ×
    ×