Semiconductor device with bulb-type recessed channel and method for fabricating the same
First Claim
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1. A method for fabricating a semiconductor device, the method comprising:
- providing a substrate having a bulb-type recessed region;
forming a gate insulating layer over the bulb-type recessed region and the substrate; and
forming a gate conductive layer over the gate insulating layer and filing the bulb-type recessed region, wherein the gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers, wherein forming the gate conductive layers comprisesforming a first gate conductive layer having a first thickness over the gate insulating layer,performing a thermal treatment on the first gate conductive layer to diffuse out vacancies melted in equilibrium inside the first gate conductive layer, andforming a second gate conductive layer having a second thickness over the first gate conductive layer, wherein the second gate conductive layer fills the bulb-type recessed region.
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Abstract
A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.
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Citations
17 Claims
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1. A method for fabricating a semiconductor device, the method comprising:
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providing a substrate having a bulb-type recessed region; forming a gate insulating layer over the bulb-type recessed region and the substrate; and forming a gate conductive layer over the gate insulating layer and filing the bulb-type recessed region, wherein the gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers, wherein forming the gate conductive layers comprises forming a first gate conductive layer having a first thickness over the gate insulating layer, performing a thermal treatment on the first gate conductive layer to diffuse out vacancies melted in equilibrium inside the first gate conductive layer, and forming a second gate conductive layer having a second thickness over the first gate conductive layer, wherein the second gate conductive layer fills the bulb-type recessed region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for fabricating a semiconductor device, the method comprising:
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providing a substrate having a bulb-type recessed region; forming a gate insulating layer over the bulb-type recessed region and the substrate; and forming a gate conductive layer over the gate insulating layer and filing the bulb-type recessed region, wherein the gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers, wherein forming the gate conductive layer comprises providing a source gas on the gate insulating layer to form a first gate conductive layer having a first thickness, temporarily stopping providing the source gas, and providing the source gas again to form a second gate conductive layer having a second thickness over the first gate conductive layer, wherein during temporarily stopping providing the source gas, a temperature is maintained at substantially the same temperature as the temperature used in forming the first gate conductive layer. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method for fabricating a semiconductor device, the method comprising:
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providing a substrate having a bulb-type recessed region; forming a gate insulating layer over the bulb-type recessed region and the substrate; forming a first gate conductive layer having a first thickness over the gate insulating layer; performing a thermal treatment on the first gate conductive layer to diffuse out vacancies melted in equilibrium inside the first gate conductive layer; and forming a second gate conductive layer having a second thickness over the first gate conductive layer, wherein the second gate conductive layer fills the bulb-type recessed region, wherein a discontinuous interface is formed between the first gate conductive layer and the second gate conductive layer.
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17. A method for fabricating a semiconductor device, the method comprising:
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providing a substrate having a bulb-type recessed region; forming a gate insulating layer over the bulb-type recessed region and the substrate; providing a source gas on the gate insulating layer to form a first gate conductive layer having a first thickness; temporarily stopping providing the source gas; and providing the source gas again to form a second gate conductive layer having a second thickness over the first gate conductive layer, wherein the second gate conductive layer fills the bulb-type recessed region, wherein a discontinuous interface is formed between the first gate conductive layer and the second gate conductive layer, wherein during temporarily stopping providing the source gas, a temperature is maintained at substantially the same temperature as the temperature used in forming the first gate conductive layer.
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Specification