Capacitor structure
First Claim
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1. A capacitor structure formed on a semiconductor substrate, comprising:
- a first electrode line formed in a first wiring layer and having a first electrode base and a first extension extending from the first electrode base;
a second electrode line formed in the first wiring layer and having a second electrode base and a second extension extending from the second electrode base;
a third electrode line formed in a second wiring layer different from the first wiring layer;
a first electrode having a plurality of teeth protruding in a comb shape from the first electrode base of the first electrode line; and
a second electrode having a plurality of teeth protruding in a comb shape from the second electrode base of the second electrode line,wherein the first and second electrodes face each other with their teeth interdigitated with each other via a dielectric,all of the plurality of teeth of the first electrode protrude from the first electrode base, and all of the plurality of teeth of the second electrode protrude from the second electrode base,at least one of the plurality of teeth of the first electrode is electrically connected to the third electrode line, andthe third electrode line extends across at least one of the plurality of teeth of the second electrode in a plan view.
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Abstract
The capacitor structure includes a first electrode having a plurality of teeth protruding in a comb shape from an electrode base of a first electrode line and a second electrode having a plurality of teeth protruding in a comb shape from an electrode base of a second electrode line, both formed in a first wiring layer. The first and second electrodes face each other with their teeth interdigitated with each other via a dielectric. At least one of the teeth of the first electrode is electrically connected with a third electrode line formed in a second wiring layer.
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Citations
24 Claims
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1. A capacitor structure formed on a semiconductor substrate, comprising:
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a first electrode line formed in a first wiring layer and having a first electrode base and a first extension extending from the first electrode base; a second electrode line formed in the first wiring layer and having a second electrode base and a second extension extending from the second electrode base; a third electrode line formed in a second wiring layer different from the first wiring layer; a first electrode having a plurality of teeth protruding in a comb shape from the first electrode base of the first electrode line; and a second electrode having a plurality of teeth protruding in a comb shape from the second electrode base of the second electrode line, wherein the first and second electrodes face each other with their teeth interdigitated with each other via a dielectric, all of the plurality of teeth of the first electrode protrude from the first electrode base, and all of the plurality of teeth of the second electrode protrude from the second electrode base, at least one of the plurality of teeth of the first electrode is electrically connected to the third electrode line, and the third electrode line extends across at least one of the plurality of teeth of the second electrode in a plan view. - View Dependent Claims (2, 3, 4, 5, 6, 11, 13, 15, 17, 18, 19, 20, 21, 23)
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7. A capacitor structure formed on a semiconductor substrate, comprising:
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a first electrode formed in a first wiring layer and having a first extension and a first spiral portion extending from the first extension; a second electrode formed in the first wiring layer and having a second extension and a second spiral portion extending from the second extension; a third electrode line formed in a second wiring layer different from the first wiring layer, wherein the first and second spiral portions face each other and are intertwined with each other via a dielectric, and the first spiral portion of the first electrode is electrically connected with the third electrode line so as to form a route of a current flow between the first extension and the third electrode line, and the third electrode line extends across at least one of a part of the first spiral portion of the first electrode and a part of the second spiral portion of the second electrode in a plan view. - View Dependent Claims (8, 9, 10, 12, 14, 16, 24)
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22. A capacitor structure formed on a semiconductor substrate, comprising:
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a first electrode formed in a first wiring layer and having a first electrode base and a plurality of first teeth protruding in a comb shape from the first electrode base; a second electrode formed in the first wiring layer and having a second electrode base and a plurality of second teeth protruding in a comb shape from the second electrode base; a third electrode formed in a second wiring layer different from the first wiring layer, wherein the first and second teeth face each other by being interdigitated with each other via a dielectric, at least one of the plurality of first teeth of the first electrode is electrically connected to the third electrode, and the third electrode extends across at least one of the plurality of second teeth of the second electrode in a plan view.
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Specification