Remote chip attachment

• US 7,838,997 B2
• Filed: 01/10/2006
• Issued: 11/23/2010
• Est. Priority Date: 06/14/2005
• Status: Active Grant

• Current Assignee: Cufer Asset Ltd LLC (Intellectual Ventures LLC)
• Original Assignee: Cufer Asset Ltd LLC (Intellectual Ventures LLC)
• Inventors: Trezza, John
• Primary Examiner(s): Potter; Roy K
• Application Number:
  US11/329,557
• Publication Number:
  US 20060281363A1
• Time in Patent Office: 1,778 Days
• Field of Search: 438/108, 438/613, 257/737, 257/778, 257/777, 257/685, 257/686, 257/738, 257/E23.067, 257/E23.174, 257/E21.575, 257/E21.627, 257/E21.641
• US Class Current: 257/778
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05023 the whole internal layer protruding from the surface
• CPC Class Codes: H01L 2224/05026 the internal layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05027 the internal layer extending out of an opening
• CPC Class Codes: H01L 2224/0508 being stacked
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/0615 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13609 Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/24226 : the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/75305 : comprising protrusions
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A method of attaching a pair of chips, each having primary contacts that can be mated to each other, involves forming one or more secondary contacts on each of the two chips of a shape sufficient to prevent an initial attachment material from contacting any of the primary contacts during a preliminary attachment operation, the secondary contacts further having a height that will prevent the primary contacts from touching when the secondary contacts are brought into contact with each other, bringing the secondary contacts into closer and closer aligned proximity to each other at least until the primary contacts touch in a first phase, and heating the primary contacts until material between each of corresponding primary contacts on each of the chips in the pair forms an electrical connection.

Claims

1. An apparatus, comprising:

a primary contact pair, wherein the primary contact pair includes a first contact and a second contact and is configured to electrically couple a first chip to a second chip, and wherein the first contact comprises a post configured to be joined to the second contact at a first temperature;

a secondary contact pair comprising a non-electrically conductive well, a third contact, and a fourth contact; and

a material coupling the third contact and the fourth contact, wherein the material has a melting point below the first temperature;

wherein the non-electrically conductive well is configured to retain at least a portion of the material to prevent the material from electrically shorting contacts between which no direct electrical connection should exist.

2. The apparatus of claim 1, wherein the material comprises a metal having a melting point below 250°

C.

3. The apparatus of claim 2, wherein the metal comprises indium.

4. The apparatus of claim 2, wherein the metal comprises a solder.

5. The apparatus of claim 4, wherein the metal comprises an alloy.

6. The apparatus of claim 1, wherein the non-electrically conductive well comprises a dielectric material.

7. The apparatus of claim 1, wherein the non-electrically conductive well comprises a photoresist material.

8. The apparatus of claim 1, wherein the non-electrically conductive well comprises an epoxy.

9. The apparatus of claim 1, wherein the post comprises a profiled post.

28. The apparatus of claim 7, configured so that before the first and second chips are to be connected, a combined height of the third and fourth contacts is larger than a combined height of the first and second contacts.

10. An apparatus, comprising:

a primary contact pair, wherein the primary contact pair includes a first contact and a second contact and is configured to electrically couple a first chip to a second chip; and

a secondary non-metallic contact pair remote from the primary contact pair, wherein the secondary contact pair comprises a third contact and a fourth contact and is configured to physically connect the first and second chips.

11. The apparatus of claim 10, wherein the first contact is capacitively coupled to the second contact.

12. The apparatus of claim 10, wherein the primary contact pair is configured to electrically couple the two chips via a physical connection formed by a malleable material trapped between two barrier materials.

13. The apparatus of claim 10, wherein the third contact and the fourth contact are bonded to each other by an epoxy.

14. The apparatus of claim 13, wherein the primary contact pair comprises a post portion that penetrates into a malleable portion.

15. The apparatus of claim 10, wherein the third contact and the fourth contact are bonded to each other by van der Waals forces.

16. The apparatus of claim 15, wherein the primary contact pair comprises a post portion that penetrates into a malleable portion.

17. The apparatus of claim 10, wherein the third contact and the fourth contact are bonded to each other by covalent bonding.

18. The apparatus of claim 17, wherein the primary contact pair comprises a post portion that penetrates into a malleable portion.

19. The apparatus of claim 10, wherein the secondary contact pair comprises an oxide.

20. The apparatus of claim 19, wherein the primary contact pair comprises a post portion that penetrates into a malleable portion.

21. The apparatus of claim 10, further comprising an electrically conductive via passing through one of the first chip or the second chip, and wherein one of the contacts in the primary contact pair is located on an end of the electrically conductive via.

22. The apparatus of claim 10, further comprising an electrically conductive coaxial via, wherein the electrically conductive coaxial via includes:

a first conductor; and

a second conductor surrounding the first conductor and electrically insulated therefrom;

wherein the electrically conductive coaxial via passes through one of the first chip or the second chip; and

wherein one of the contacts in the primary contact pair is located at an end of the electrically conductive coaxial via on one of the first conductor or the second conductor.

23. The apparatus of claim 10, further comprising an electrically conductive triaxial via, wherein the electrically conductive triaxial via includes:

a first conductor;

a second conductor surrounding the first conductor; and

a third conductor surrounding the second conductor;

wherein the first, second, and third conductors are electrically insulated from each other;

wherein the electrically conductive triaxial via passes through one of the first chip or the second chip; and

wherein one of the contacts in the primary contact pair is located at an end of the triaxial via on one of the first conductor, the second conductor, or the third conductor.

24. The apparatus of claim 10, wherein the third and fourth contacts are mated to each other to form the secondary contact pair.

25. The apparatus of claim 24, wherein the secondary contact pair does not electrically couple the first and second chips.

26. The apparatus of claim 10, wherein the first, second, third, and fourth contacts are configured so that during a process of connecting the first and second chips, the third contact comes into contact with the fourth contact before the first contact comes into contact with the second contact.

27. The apparatus of claim 10, wherein the third and fourth contacts are substantially aligned.

29. An apparatus, comprising:

a primary contact pair, wherein the primary contact pair includes a first contact and a second contact and is configured to electrically couple a first chip to a second chip; and

a secondary contact pair remote from the primary contact pair, wherein the secondary contact pair includes a rigid contact and a malleable contact and is configured to physically connect the first and second chips.

30. The apparatus of claim 29, wherein the primary contact pair comprises a post portion that penetrates into a malleable portion.

31. The apparatus of claim 29, further comprising an electrically conductive coaxial via, wherein the electrically conductive coaxial via includes:

a first conductor; and

a second conductor surrounding the first conductor and electrically insulated therefrom;

wherein the electrically conductive coaxial via passes through one of the first chip or the second chip; and

wherein one of the contacts in the primary contact pair is located at an end of the electrically conductive coaxial via on one of the first conductor or the second conductor.

32. The apparatus of claim 29, wherein the secondary contact pair does not electrically couple the first and second chips.

33. The apparatus of claim 29, wherein the rigid contact and the malleable contact are substantially aligned.