Method for fabricating semiconductor device

• US 7,842,518 B2
• Filed: 11/01/2007
• Issued: 11/30/2010
• Est. Priority Date: 11/02/2006
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Miyajima, Hideshi
• Primary Examiner(s): Landau; Matthew C
• Assistant Examiner(s): SNOW, COLLEEN ERIN
• Application Number:
  US11/933,785
• Publication Number:
  US 20080108153A1
• Time in Patent Office: 1,125 Days
• Field of Search: 438/4, 438/409, 438/778, 438/791, 257/E21.001, 257/E21.273
• US Class Current: 438/4
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/02351 treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31695 Deposition of porous oxides or porous glassy oxides or oxide based porous glass
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76825 by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76828 thermal treatment
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 : OLED

Abstract

A method for fabricating a semiconductor device, includes forming a porous dielectric film above a substrate using a porous insulating material, forming an opening in the porous dielectric film, repairing film quality of the porous dielectric film on a surface of the opening by feeding a predetermined gas replacing a Si—OH group to the opening, and performing pore sealing of the surface of the opening using the same predetermined gas as that used for film quality repairs after repairing the film quality.

Claims

1. A method for fabricating a semiconductor device, comprising:

forming a porous dielectric film above a substrate using a porous insulating material;

forming an opening in the porous dielectric film;

repairing film quality of the porous dielectric film on a surface of the opening by feeding a predetermined gas replacing a Si—

OH group to the opening; and

performing pore sealing of the surface of the opening using the same predetermined gas as that used for film quality repairs after repairing the film quality,

wherein a gas having a Si—

C—

Si bond is used as the predetermined gas.

2. The method according to claim 1, wherein the predetermined gas has, in addition to the Si—

C—

Si bond, further a Si—

NRR′

group (R and R′

are selected from H or alkyl group).

3. The method according to claim 1, further comprising:

exposing the surface of the opening to an oxygen plasma atmosphere after repairing the film quality of the porous dielectric film on the surface of the opening, wherein

the pore sealing is performed after the surface of the opening is exposed to the oxygen plasma atmosphere.

4. The method according to claim 3, further comprising:

performing ashing before repairing the film quality, wherein

a weaker discharge than that used for the ashing is used for exposure to the oxygen plasma atmosphere.

5. The method according to claim 4, wherein a plasma discharge is performed for performing the pore sealing, the plasma discharge for the pore sealing using a discharge weaker than that used for the ashing.

6. The method according to claim 3, wherein the pore sealing is selectively performed on the surface of the porous dielectric film appearing in the opening.

7. The method according to claim 1, wherein at least one selected from an alkoxysilane class, a silazane class and an alkylsilane halide class is used as the predetermined gas.

8. The method according to claim 1, wherein a plasma discharge is performed when performing the pore sealing.

9. The method according to claim 8, wherein a weaker plasma discharge is performed when the film quality is repaired than when the pore sealing is performed.

10. The method according to claim 1, wherein repairs of the film quality and the pore sealing are processed inside an identical process chamber.

11. The method according to claim 1, wherein a thermal reaction is used as a reaction for repairing the film quality.

12. The method according to claim 1, wherein the pore sealing is performed by forming 5 nm or more of a predetermined film on the surface of the opening.

13. The method according to claim 1, wherein a higher level of energy is fed when performing the pore sealing than when repairing the film quality.

14. A method for fabricating a semiconductor device, comprising:

forming a porous dielectric film above a substrate using a porous insulating material;

exposing the porous dielectric film to an oxygen plasma atmosphere; and

repairing film quality of the porous dielectric film by feeding a predetermined material that replaces a Si—

OH group and also has a Si—

C—

Si bond to the porous dielectric film exposed to the oxygen plasma atmosphere.

15. The method according to claim 14, further comprising:

forming an opening in the porous dielectric film, wherein

a process of exposing to the oxygen plasma atmosphere and that of repairing the film quality are performed at least once before the opening is formed and after the opening is formed.

16. The method according to claim 14, wherein the predetermined material is fed as a chemical solution.

17. The method according to claim 14, wherein at least one selected from an alkoxysilane class, a silazane class and an alkylsilane halide class is used as the predetermined material.

18. The method according to claim 14, further comprising:

forming a dielectric film on the porous dielectric film using a plasma CVD process after repairing the film quality.

19. The method according to claim 14, wherein curing by electron beams is performed when the film quality is repaired.