Organic inverter including surface-treated layer and method of manufacturing the same
First Claim
1. An inverter, comprising:
- a load transistor including a gate electrode, source and drain electrodes, a load insulating layer formed on the gate electrode, the source electrode being connected to the gate electrode, and an organic semiconductor layer formed on the load insulating layer;
a driver transistor connected to the load transistor and including a gate electrode, source and drain electrodes, a driver insulating layer formed on the gate electrode, and an organic semiconductor layer formed on the load insulating layer, wherein the drain electrode of the driver transistor is directly connected to the gate electrode of the load transistor, anda surface-treated layer formed on a predetermined insulating layer, the predetermined insulating layer being one of the load insulating layer and the driver insulating layer, such that the driver transistor is a depletion-type transistor and the load transistor is an enhancement-type transistor,wherein the load transistor and the driver transistor have substantially the same W/L ratio.
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Accused Products
Abstract
An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.
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Citations
16 Claims
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1. An inverter, comprising:
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a load transistor including a gate electrode, source and drain electrodes, a load insulating layer formed on the gate electrode, the source electrode being connected to the gate electrode, and an organic semiconductor layer formed on the load insulating layer; a driver transistor connected to the load transistor and including a gate electrode, source and drain electrodes, a driver insulating layer formed on the gate electrode, and an organic semiconductor layer formed on the load insulating layer, wherein the drain electrode of the driver transistor is directly connected to the gate electrode of the load transistor, and a surface-treated layer formed on a predetermined insulating layer, the predetermined insulating layer being one of the load insulating layer and the driver insulating layer, such that the driver transistor is a depletion-type transistor and the load transistor is an enhancement-type transistor, wherein the load transistor and the driver transistor have substantially the same W/L ratio. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An inverter, comprising:
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a p-type load transistor including a gate electrode, source and drain electrodes, a load insulating layer formed on the gate electrode, the source electrode being connected to the gate electrode, and an organic semiconductor layer formed on the load insulating layer; a p-type driver transistor connected to the p-type load transistor and including a gate electrode, source and drain electrodes, a driver insulating layer formed on the gate electrode, and an organic semiconductor layer formed on the load insulating layer, wherein the drain electrode of the p-type driver transistor is directly connected to the gate electrode of the p-type load transistor; and a surface-treated layer formed on a predetermined insulating layer, the predetermined insulating layer being one of the load insulating layer and the driver insulating layer, such that the load transistor is a depletion-type transistor and the driver transistor is an enhancement-type transistor, wherein the p-type load transistor and the p-type driver transistor have substantially the same W/L ratio. - View Dependent Claims (13, 14, 15, 16)
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Specification