Insulated gate type semiconductor device and method for fabricating the same

• US 7,843,001 B2
• Filed: 08/11/2009
• Issued: 11/30/2010
• Est. Priority Date: 02/19/2001
• Status: Active Grant

• Current Assignee: Renesas Semiconductor Package & Test Solutions Co., Ltd. (Renesas Electronics Corporation)
• Original Assignee: Hitachi TOBU Semiconductor Limited (Hitachi, Ltd.), Renesas Electronics Corporation
• Inventors: Oishi, Kentaro, Inagawa, Hiroshi, Machida, Nobuo
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US12/539,383
• Publication Number:
  US 20090294845A1
• Time in Patent Office: 476 Days
• Field of Search: 257/332, 257/334
• US Class Current: 257/332
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/0638 for preventing surface leakage due to surface inversion layer, e.g. with channel stopper channel stoppers in combination with isolation region for integrated circuits H01L21/762
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/511 with a compositional variation, e.g. multilayer structures H01L29/516 takes precedence
• CPC Class Codes: H01L 29/66333 Vertical insulated gate bipolar transistors
• CPC Class Codes: H01L 29/66348 with a recessed gate
• CPC Class Codes: H01L 29/66719 With a step of forming an insulating sidewall spacer
• CPC Class Codes: H01L 29/66727 with a step of recessing the source electrode
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7808 the other device being a breakdown diode, e.g. Zener diode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7821 the other device being a breakdown diode, e.g. Zener diode
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence

Abstract

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.

Claims

1. An insulated-gate type semiconductor device having a longitudinal structure, comprising:

a semiconductor main body of a first conductivity type;

a first semiconductor region of a second conductivity type, which is formed in a portion of said semiconductor main body;

a second semiconductor region of the first conductivity type, which is formed in a portion of said first semiconductor region; and

a trench gate which reaches from a major surface of said second semiconductor region to a region of said semiconductor main body;

wherein;

a portion of a gate pillar which is made of both said trench gate and an insulating film covering an upper surface of said trench gate is projected from the major surface of said second semiconductor region;

a side wall spacer is provided on a side wall of said projected gate pillar; and

a source electrode connected to said second semiconductor region is provided on a contact region defined by said side wall spacer.

3. An insulated-gate type semiconductor device as claimed in claim 1 wherein:

said side wall is formed via a thermal oxidation film which is formed on a surface of the projected portion of said trench gate.

2. An insulated-gate type semiconductor device having a longitudinal structure, comprising:

a semiconductor main body of a first conductivity type;

a first semiconductor region of a second conductivity type, which is formed in a portion of said semiconductor main body;

a second semiconductor region of the first conductivity type, which is formed in a portion of said first semiconductor region; and

a trench gate which reaches from a major surface of said second semiconductor region to a region of said semiconductor main body;

wherein;

a portion of said trench gate is projected from the major surface of said second semiconductor region;

a side wall spacer is provided on both said projected trench gate and a side wall of an insulating film covering an upper surface of said trench gate; and

a source electrode connected to said second semiconductor region is provided in a contact hole defined by said side wall spacer.

4. A semiconductor device comprising:

(a) a semiconductor substrate of a first conductivity type;

(b) a gate trench formed in a main surface of the semiconductor substrate;

(c) a gate insulating film formed over an inner wall and a bottom portion of the gate trench;

(d) a gate electrode formed so as to fill the gate trench and a portion of which protrudes from the semiconductor substrate;

(e) a side wall formed over a side wall portion of the gate electrode protruding from the semiconductor substrate such that the height of an uppermost portion of the side wall is higher than the height of an uppermost portion of the gate electrode;

(f) a source region of the first conductivity type, formed so as to be adjacent to the gate electrode;

(g) a body trench formed between said side wall and another said side wall formed over a side wall portion of an adjacent gate electrode by self-alignment with the gate electrodes, so as to be deeper than a depth of the source region;

(h) a first semiconductor region formed at a bottom portion of the body trench and having a second conductivity type that is different from the first conductivity type; and

(i) a drain region of the first conductivity type, formed in a portion opposite to the main surface of the semiconductor substrate.

5. The semiconductor device according to claim 4, further comprising:

a first insulating film formed over the gate electrode,

wherein the side wall is also formed over a side wall portion of the first insulating film.

6. The semiconductor device according to claim 4, further comprising:

a conductive film extending over the gate electrode and electrically connected to the first semiconductor region.