Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory

• US 7,843,669 B2
• Filed: 02/06/2009
• Issued: 11/30/2010
• Est. Priority Date: 03/28/2002
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Fukuzawa, Hideaki, Yuasa, Hiromi, Sahashi, Masashi, Iwasaki, Hitoshi, Fuke, Hiromi
• Primary Examiner(s): BLOUIN, MARK S
• Application Number:
  US12/366,972
• Publication Number:
  US 20090141408A1
• Time in Patent Office: 662 Days
• Field of Search: None
• US Class Current: 360/324.1
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 5/3906 Details related to the use of magnetic thin film layers or to their effects
• CPC Class Codes: G11B 5/398 Specially shaped layers
• CPC Class Codes: G11B 5/3983 with current confined paths in the spacer layer
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01F 10/1936 Half-metallic, e.g. epitaxial CrO2 or NiMnSb films
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3259 Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H01F 10/3281 only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
• CPC Class Codes: H01F 41/303 with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
• CPC Class Codes: H01F 41/325 applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: Y10T 428/1121 Multilayer

Abstract

A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

Claims

1. A magnetoresistance effect element comprising:

a magnetoresistance effect film; and

a pair of electrodes electrically coupled to the magnetoresistance effect film;

wherein

the magnetoresistance effect film comprises;

a first magnetic layer whose direction of magnetization is substantially pinned in one direction;

a second magnetic layer whose direction of magnetization changes in response to an external magnetic field;

a nonmagnetic intermediate layer located between the first and second magnetic layers; and

at least one film provided in the first magnetic layer, in the second magnetic layer, at an interface between the first magnetic layer and the nonmagnetic intermediate layer, or at an interface between the second magnetic layer and the nonmagnetic intermediate layer, wherein

a thickness of the film is not larger than 3 nanometers,

the film comprises at least one selected from the group consisting of nitride and oxynitride; and

the film comprises at least one element selected from the group consisting of magnesium (Mg), aluminum (Al), silicon (Si), calcium (calcium), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (nickel), copper (Cu), zinc (Zn), strontium (Sr), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), barium (Ba), lantern (La), hafnium (Hf), tantalum (Ta), and tungsten (W), and

the electrodes electrically coupled to the magnetoresistance effect film are configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film.

2. The magnetoresistance effect element according to claim 1, wherein a spin filtering takes place when conduction electrons which constitute the sense current pass near the film so that one of up spin electrons and down spin electrons preferentially passes.

3. The magnetoresistance effect element according to claim 1, wherein a Fermi speed of up spin electrons and a Fermi speed of down spin electrons which constitute the sense current are different in a region of the first or second magnetic layer, the region adjoining the film.

4. The magnetoresistance effect element according to claim 1, wherein a mean thickness of the film is in a range between one atomic layer and three atomic layers.

5. The magnetoresistance effect element according to claim 1, wherein the film is uniform.

6. The magnetoresistance effect element according to claim 1, which comprises two of the films,

wherein the films are formed in two positions selected from the group consisting of in the second magnetic layer, at an interface between the first magnetic layer and the nonmagnetic intermediate layer, and at an interface between the second magnetic layer and the nonmagnetic intermediate layer.

7. The magnetoresistance effect element according to claim 1, wherein at least one of the first and second magnetic layers comprises a material having a crystal structure of a face centered cubic,

wherein its film plane is oriented in a direction substantially parallel to a (111) plane, and its orientation dispersion angle is equal to or smaller than 5 degrees.

8. The magnetoresistance effect element according to claim 1, wherein at least one of the first and second magnetic layers comprises a material having a crystal structure of a face centered cubic,

wherein its film plane is oriented in a direction substantially parallel to a (110) plane, and its orientation dispersion angle is equal to or smaller than 5 degrees.

9. The magnetoresistance effect element according to claim 1, wherein a product AR of an area A and resistance R is equal to or smaller than 500 mΩ

μ

m², where the area A is an area of a portion of the magnetoresistance effect film that the sense current substantially passes through, and the resistance R is a resistance obtained between the pair of electrodes.

10. The magnetoresistance effect element according to claim 6, wherein a distance between the neighboring films is in a range between 0.2 nanometers and 3 nanometers.

11. The magnetoresistance effect element according to claim 2, wherein at least one of the first and second magnetic layers comprises a material having a crystal structure of a face centered cubic,

wherein its film plane is oriented in a direction substantially parallel to (111) plane, and its orientation dispersion angle is equal to or smaller than 5 degrees.

12. The magnetoresistance effect element according to claim 2, wherein at least one of the first and second magnetic layers comprises a material having a crystal structure of a face centered cubic,

wherein its film plane is oriented in a direction substantially parallel to (110) plane, and its orientation dispersion angle is equal to or smaller than 5 degrees.

13. The magnetoresistance effect element according to claim 1, wherein the first or second magnetic layer which includes or adjoins the film comprises a ferromagnetic material including at least one selected from the group consisting of iron (Fe), cobalt (Co), and nickel (Ni).

14. The magnetoresistance effect element according to claim 1, further comprising a nonmagnetic metal layer adjoining the film and provided in the first and/or second magnetic layer, the nonmagnetic metal layer having a thickness equal to or smaller than 2 nanometers.

15. The magnetoresistance effect element according to claim 1 further comprising a nonmagnetic metal layer adjoining the film and provided at an interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at an interface between the second magnetic layer and the nonmagnetic intermediate layer, the nonmagnetic metal layer having a thickness equal to or smaller than 2 nanometers.

16. The magnetoresistance effect element according to claim 1 further comprising:

a magnetic metal layer adjoining the film and provided in the first and/or second magnetic layer; and

a nonmagnetic layer adjoining the magnetic metal layer, and having a thickness equal to or smaller than 2 nanometers.

17. The magnetoresistance effect element according to claim 1, further comprising:

a magnetic metal layer adjoining the film and provided at an interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at an interface between the second magnetic layer and the nonmagnetic intermediate layer; and

a nonmagnetic layer adjoining the magnetic metal layer, and having a thickness equal to or smaller than 2 nanometers.

18. The magnetoresistance effect element according to claim 16, wherein the first or second magnetic layer is magnetically coupled through the film, the magnetic metal layer and the nonmagnetic metal layer included within its layer.

19. The magnetoresistance effect element according to claim 1, wherein a distance between the film and the nonmagnetic intermediate layer is equal to or smaller than three nanometers.

20. A magnetic reproducing apparatus which reads information magnetically recorded in a magnetic recording medium,

the magnetic reproducing apparatus comprising a magnetic head having a magnetoresistance effect element according to claim 1.

21. A magnetic memory comprising a plurality of magnetoresistance effect elements according to claim 1 arranged in a matrix fashion.