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Ultra high speed uniform plasma processing system

  • US 7,845,309 B2
  • Filed: 07/13/2004
  • Issued: 12/07/2010
  • Est. Priority Date: 07/13/2004
  • Status: Active Grant
First Claim
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1. An apparatus for processing a substrate with a plasma, the apparatus comprising:

  • a first electrode;

    a second electrode;

    a separating member directly contacting said first electrode and directly contacting said second electrode and forming a sidewall extending from said first electrode to said second electrode, said separating member composed of a dielectric material capable of electrically isolating said first electrode from said second electrode;

    a processing region formed by said separating member, said first electrode, and said second electrode;

    a process gas port for introducing a process gas to said processing region;

    a vacuum port in said first electrode for evacuating said processing region to a sub-atmospheric pressure suitable for generating the plasma from the process gas in said processing region;

    an electrically conductive shell surrounding said first electrode, said second electrode, and said separating member; and

    an atmospheric pressure space between said shell and said first electrode, said second electrode, and said separating member.

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