Photocatalyst materials having semiconductor characteristics and methods for manufacturing and using the same
First Claim
1. A method for preparing a photocatalyst material comprising the sequential steps of:
- (a) forming a mixture of a first-metal precursor and a second-metal precursor in a predetermined molar ratio of said second-metal relative to said first-metal, wherein said first-metal is a metal that exhibits photo-induced semiconductor properties and said second-metal is a dopant selected from the group consisting of tungsten (W), vanadium (V), and alloys and combinations thereof;
(b) dialyzing the mixture of first-metal precursor and second-metal precursor to remove nonessential ion(s) from the mixture thereby to form a preliminary product comprising an oxide of the first-metal having ions of the second-metal dispersed therethrough;
(c) drying the preliminary product to form a dried first-metal oxide product doped with ions of said second-metal, said dried product comprising very small particles; and
,(d) calcinating the dried first-metal oxide product by applying heat to form the photocatalyst material.
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Abstract
New types of photocatalyst materials are disclosed together with methods for preparing and using these materials, as well as air treatment systems incorporating such materials. The photocatalyst materials of this invention consist essentially of very small particles of a first-metal oxide, the first-metal being a metal that exhibits photo-induced semiconductor properties, having ions of a second-metal dispersed throughout its lattice structure, the second-metal being selected from the group of dopant metals. Such photocatalyst materials are prepared by the steps of mixing first-metal and second-metal precursors, removing nonessential ions from the mixture, drying the resulting product, and calcinating the dried product to produce the completed photocatalyst material.
15 Citations
19 Claims
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1. A method for preparing a photocatalyst material comprising the sequential steps of:
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(a) forming a mixture of a first-metal precursor and a second-metal precursor in a predetermined molar ratio of said second-metal relative to said first-metal, wherein said first-metal is a metal that exhibits photo-induced semiconductor properties and said second-metal is a dopant selected from the group consisting of tungsten (W), vanadium (V), and alloys and combinations thereof; (b) dialyzing the mixture of first-metal precursor and second-metal precursor to remove nonessential ion(s) from the mixture thereby to form a preliminary product comprising an oxide of the first-metal having ions of the second-metal dispersed therethrough; (c) drying the preliminary product to form a dried first-metal oxide product doped with ions of said second-metal, said dried product comprising very small particles; and
,(d) calcinating the dried first-metal oxide product by applying heat to form the photocatalyst material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification