Growth of reduced dislocation density non-polar gallium nitride

• US 7,847,293 B2
• Filed: 02/01/2007
• Issued: 12/07/2010
• Est. Priority Date: 12/16/2002
• Status: Active Grant

• Current Assignee: Japan Science & Technology Trading Co. Limited, Regents of the University of California (University of California)
• Original Assignee: Japan Science & Technology Trading Co. Limited, Regents of the University of California (University of California)
• Inventors: Haskell, Benjamin A., Speck, James S., DenBaars, Steven P., Nakamura, Shuji, Craven, Michael D., Fini, Paul T.
• Primary Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US11/670,332
• Publication Number:
  US 20070126023A1
• Time in Patent Office: 1,405 Days
• Field of Search: 257/64, 257/75, 257/E21.05, 257/E33.005, 438/481, 438/483
• US Class Current: 257/64
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02647 Lateral overgrowth

Abstract

Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.

Claims

1. A method of performing a lateral epitaxial overgrowth of a planar and non-polar gallium nitride (GaN) film, comprising:

(a) patterning a mask deposited on a substrate; and

(b) performing a lateral epitaxial overgrowth of the planar and non-polar GaN film off the substrate, wherein the planar and non-polar GaN film nucleates only on portions of the substrate not covered by the patterned mask, the planar and non-polar GaN film grows vertically through openings in the patterned mask, and the planar and non-polar GaN film then spreads laterally above the patterned mask and across the substrate'"'"'s surface resulting in a top surface that is planar and non-polar GaN.

2. The method of claim 1, wherein the planar and non-polar GaN film is a coalesced planar and non-polar GaN film.

3. The method of claim 1, wherein the planar and non-polar GaN film is an uncoalesced planar and non-polar GaN film.

4. A device manufactured using the method of claim 1.

5. A lateral epitaxial overgrowth of a planar and non-polar gallium nitride (GaN) film off a substrate, wherein the lateral epitaxial overgrowth is created using a process comprising:

(a) patterning a dielectric mask deposited on a substrate; and

(b) performing a lateral epitaxial overgrowth of the planar and non-polar GaN film off the substrate, wherein the planar and non-polar GaN film nucleates only on portions of the substrate exposed by the patterned dielectric mask, the planar and non-polar GaN film grows vertically through openings in the patterned dielectric mask, and the planar and non-polar GaN film then spreads laterally above the patterned dielectric mask and across the substrate'"'"'s surface resulting in a top surface that is planar and non-polar GaN.

6. The process of claim 5, wherein the planar and non-polar GaN film is a coalesced planar and non-polar GaN film.

7. The process of claim 5, wherein the planar and non-polar GaN film is an uncoalesced planar and non-polar GaN film.

8. A device including a lateral epitaxial overgrowth of a planar and non-polar gallium nitride (GaN) film having a top surface that is planar and non-polar GaN.

9. The device of claim 8, wherein the device is light-emitting diode, a laser diode or a transistor.